Pb Free Plating Product
Advanced Power Electronics Corp.▼ Simple Drive Requirement▼ Small Package Outline▼ Surface Mount Device▼ RoHS Compliant
S
SOT-23
GD
N-CHANNEL ENHANCEMENT MODEPOWER MOSFET
BVDSSRDS(ON)ID
60V2Ω0mA
Description
Advanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, extremely efficient andcost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrialapplications.
DGSAbsolute Maximum Ratings
SymbolVDSVGS
ID@TA=25℃ID@TA=70℃IDM
PD@TA=25℃TSTGTJ
Parameter
Drain-Source VoltageGate-Source Voltage
Continuous Drain Current3, VGS @ 10VContinuous Drain Current3, VGS @ 10VPulsed Drain Current1,2Total Power DissipationLinear Derating FactorStorage Temperature Range
Operating Junction Temperature Range
Rating60±2005009501.380.01-55 to 150-55 to 150
UnitsVVmAmAmAW W/℃℃℃
Thermal Data
SymbolRthj-a
Parameter
Thermal Resistance Junction-ambient3
Max.
Value90
Unit℃/W
Data and specifications subject to change without notice
200209062-1/4
AP2N7002KElectrical Characteristics@Tj=25oC(unless otherwise specified)
SymbolBVDSS
ΔBVDSS/ΔTj
Parameter
Drain-Source Breakdown Voltage
Test Conditions
VGS=0V, ID=250uA
Min.60---1--------------
Typ.-0.06---600---10.50.5121056293286
Max.Units--242.5-10100±301.6------50--VV/℃ΩΩVmSuAuAuAnCnCnCnsnsnsnspFpFpF
Breakdown Voltage Temperature CoefficientReference to 25℃, ID=1mA
RDS(ON)VGS(th)gfsIDSSIGSSQgQgsQgdtd(on)trtd(off)tfCissCossCrss
Static Drain-Source On-Resistance
VGS=10V, ID=500mAVGS=4.5V, ID=200mAVDS=VGS, ID=250uAVDS=10V, ID=600mAVDS=60V, VGS=0VVDS=48V ,VGS=0VVGS=±20VID=600mAVDS=50VVGS=4.5VVDS=30VID=600mARG=3.3Ω,VGS=10VRD=52ΩVGS=0VVDS=25Vf=1.0MHz
Gate Threshold VoltageForward Transconductance
Drain-Source Leakage Current (Tj=25oC)Drain-Source Leakage Current (Tj=70oC)
Gate-Source LeakageTotal Gate Charge2Gate-Source ChargeGate-Drain (\"Miller\") ChargeTurn-on Delay Time2Rise Time
Turn-off Delay TimeFall TimeInput CapacitanceOutput Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
SymbolVSD
Parameter
Forward On Voltage2
Test Conditions
IS=1.2A, VGS=0V
Min.-Typ.-Max.Units1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.2.Pulse width <300us , duty cycle <2%.3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
2/4
AP2N7002K
1.01.0TA=25C0.8oID , Drain Current (A)ID , Drain Current (A)10V7.0V5.0V4.5VTA=150C0.8o10V7.0V5.0V4.5V0.60.60.40.4VG=3.0V0.2VG=3.0V0.20.00.02.04.06.00.00246VDS , Drain-to-Source Voltage (V)VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics3.02.0ID=200mA2.5TA=25oCNormalized RDS(ON)1.5ID=500mAVG=10VRDS(ON) (mΩ)2.01.01.51.02468100.5-50050100150VGS , Gate-to-Source Voltage (V)Tj , Junction Temperature (oC) Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.70.6Normalized VGS(th) (V)0.41.3IS(A)Tj=150oCTj=25oC0.20.9000.40.81.21.60.5-50050100150VSD , Source-to-Drain Voltage (V)Tj , Junction Temperature (C)o Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3/4
AP2N7002K
f=1.0MHz16100VGS , Gate to Source Voltage (V)ID=600mA12CissVDS=30VVDS=40VVDS=50V8C (pF)10CossCrss4000.511.5211591317212529QG , Total Gate Charge (nC)VDS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
1.00011ms0.100Normalized Thermal Response (Rthja)Duty factor=0.50.210ms100ms1s0.10.10.05ID (A)PDM0.01tT0.0100.01Single PulseTA=25CSingle PulseoDCDuty factor = t/TPeak Tj = PDM x Rthja + TaRthja = 270℃/W0.0010.111010010000.0010.00010.0010.010.1110100VDS , Drain-to-Source Voltage (V)t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
1.0VDS=5V0.8VGQG4.5VQGSQGDID , Drain Current (A)Tj=25oC0.6Tj=150oC0.40.2Charge0.0Q0246VGS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
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