AP2N7002K

Pb Free Plating Product

Advanced Power Electronics Corp.▼ Simple Drive Requirement▼ Small Package Outline▼ Surface Mount Device▼ RoHS Compliant

S

SOT-23

GD

N-CHANNEL ENHANCEMENT MODEPOWER MOSFET

BVDSSRDS(ON)ID

60V2Ω0mA

Description

Advanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, extremely efficient andcost-effectiveness device.

The SOT-23 package is universally used for all commercial-industrialapplications.

DGSAbsolute Maximum Ratings

SymbolVDSVGS

ID@TA=25℃ID@TA=70℃IDM

PD@TA=25℃TSTGTJ

Parameter

Drain-Source VoltageGate-Source Voltage

Continuous Drain Current3, VGS @ 10VContinuous Drain Current3, VGS @ 10VPulsed Drain Current1,2Total Power DissipationLinear Derating FactorStorage Temperature Range

Operating Junction Temperature Range

Rating60±2005009501.380.01-55 to 150-55 to 150

UnitsVVmAmAmAW W/℃℃℃

Thermal Data

SymbolRthj-a

Parameter

Thermal Resistance Junction-ambient3

Max.

Value90

Unit℃/W

Data and specifications subject to change without notice

200209062-1/4

AP2N7002KElectrical Characteristics@Tj=25oC(unless otherwise specified)

SymbolBVDSS

ΔBVDSS/ΔTj

Parameter

Drain-Source Breakdown Voltage

Test Conditions

VGS=0V, ID=250uA

Min.60---1--------------

Typ.-0.06---600---10.50.5121056293286

Max.Units--242.5-10100±301.6------50--VV/℃ΩΩVmSuAuAuAnCnCnCnsnsnsnspFpFpF

Breakdown Voltage Temperature CoefficientReference to 25℃, ID=1mA

RDS(ON)VGS(th)gfsIDSSIGSSQgQgsQgdtd(on)trtd(off)tfCissCossCrss

Static Drain-Source On-Resistance

VGS=10V, ID=500mAVGS=4.5V, ID=200mAVDS=VGS, ID=250uAVDS=10V, ID=600mAVDS=60V, VGS=0VVDS=48V ,VGS=0VVGS=±20VID=600mAVDS=50VVGS=4.5VVDS=30VID=600mARG=3.3Ω,VGS=10VRD=52ΩVGS=0VVDS=25Vf=1.0MHz

Gate Threshold VoltageForward Transconductance

Drain-Source Leakage Current (Tj=25oC)Drain-Source Leakage Current (Tj=70oC)

Gate-Source LeakageTotal Gate Charge2Gate-Source ChargeGate-Drain (\"Miller\") ChargeTurn-on Delay Time2Rise Time

Turn-off Delay TimeFall TimeInput CapacitanceOutput Capacitance

Reverse Transfer Capacitance

Source-Drain Diode

SymbolVSD

Parameter

Forward On Voltage2

Test Conditions

IS=1.2A, VGS=0V

Min.-Typ.-Max.Units1.2

V

Notes:

1.Pulse width limited by Max. junction temperature.2.Pulse width <300us , duty cycle <2%.3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.

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AP2N7002K

1.01.0TA=25C0.8oID , Drain Current (A)ID , Drain Current (A)10V7.0V5.0V4.5VTA=150C0.8o10V7.0V5.0V4.5V0.60.60.40.4VG=3.0V0.2VG=3.0V0.20.00.02.04.06.00.00246VDS , Drain-to-Source Voltage (V)VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics3.02.0ID=200mA2.5TA=25oCNormalized RDS(ON)1.5ID=500mAVG=10VRDS(ON) (mΩ)2.01.01.51.02468100.5-50050100150VGS , Gate-to-Source Voltage (V)Tj , Junction Temperature (oC) Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

1.70.6Normalized VGS(th) (V)0.41.3IS(A)Tj=150oCTj=25oC0.20.9000.40.81.21.60.5-50050100150VSD , Source-to-Drain Voltage (V)Tj , Junction Temperature (C)o Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s. Junction Temperature

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AP2N7002K

f=1.0MHz16100VGS , Gate to Source Voltage (V)ID=600mA12CissVDS=30VVDS=40VVDS=50V8C (pF)10CossCrss4000.511.5211591317212529QG , Total Gate Charge (nC)VDS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1.00011ms0.100Normalized Thermal Response (Rthja)Duty factor=0.50.210ms100ms1s0.10.10.05ID (A)PDM0.01tT0.0100.01Single PulseTA=25CSingle PulseoDCDuty factor = t/TPeak Tj = PDM x Rthja + TaRthja = 270℃/W0.0010.111010010000.0010.00010.0010.010.1110100VDS , Drain-to-Source Voltage (V)t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

1.0VDS=5V0.8VGQG4.5VQGSQGDID , Drain Current (A)Tj=25oC0.6Tj=150oC0.40.2Charge0.0Q0246VGS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

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