Non-volatile memory devices and related methods

专利名称：Non-volatile memory devices and related

methods

发明人：Hong-Soo Kim申请号：US11473788申请日：20060623

公开号：US200602938A1公开日：20061228

专利附图：

摘要：A semiconductor device may include a semiconductor substrate having an activeregion on a surface thereof. First, second, and third gate lines may cross the active regionof the semiconductor substrate, and the first, second, and third gate lines may be

arranged in parallel across the active region, and the second gate line may be betweenthe first and third gate lines. A first insulating layer may fill a space between the first andsecond gate lines on the active region, and the first insulating layer may be a layer of afirst insulating material. First insulating spacers may be provided on opposing sidewalls ofthe third gate line and on a sidewall of the second gate line adjacent to the third gateline, and the first insulating spacers may be spacers of the first insulating material.Second insulating spacers may be provided on sidewalls of the first insulating spacers sothat the first insulating spacers are between the second insulating spacers and sidewallsof the second and third gate lines. Moreover, the second insulating spacers may bespacers of a second insulating material different than the first insulating material. Relatedmethods are also discussed.

申请人：Hong-Soo Kim

地址：Yongin-si KR

国籍：KR

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