Read only memory device

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专利名称：Read only memory device发明人：Young-Sook Do申请号：US10756962申请日：20040113

公开号：US20040151015A1公开日：20040805

专利附图：

摘要：The present invention relates to an improved read only memory device. Theread only memory device includes a read only memory cell array with a plurality of firstread only memory cells and a plurality of second read only memory cells. A referencememory cell array includes a plurality of first reference memory cells and at least one

second reference memory cell. A dummy memory cell array includes a plurality of firstdummy memory cells and a plurality of second dummy memory cells. A reference wordline selecting circuit selects the reference word line responsive to a row address.

申请人：DO YOUNG-SOOK

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