专利名称：HIGH RUGGEDNESS HETERJUNCTION
BIPOLAR TRANSISTOR (HBT)
发明人：Chao-Hsing Huang,Yu-Chung Chin,Kai-Yu
Chen
申请号：US17148709申请日：20210114
公开号：US20210217881A1公开日：20210715
专利附图：
摘要：Provided is a high ruggedness heterojunction bipolar transistor (HBT), includinga collector layer. The collector layer includes a InGaP layer or a wide bandgap layer. The
bandgap of the InGaP layer is greater than 1.86 eV.
申请人：VISUAL PHOTONICS EPITAXY CO., LTD.
地址：Taoyuan City TW
国籍：TW
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