Method of forming selective metal layer and method

专利名称：Method of forming selective metal layer and

method of forming capacitor and fillingcontact hole using the same

发明人：Sang-bum Kang,Yun-sook Chae,Sang-in

Lee,Hyun-seok Lim,Mee-young Yoon

申请号：US09334588申请日：19990616公开号：US06372598B1公开日：20020416

专利附图：

摘要：A selective metal layer formation method, a capacitor formation method using

the same, and a method of forming an ohmic layer on a contact hole and filling thecontact hole using the same, are provided. A sacrificial metal layer is selectively

deposited on a conductive layer by supplying a sacrificial metal source gas which depositsselectively on a semiconductor substrate having an insulating film and the conductivelayer. Sacrificial metal atoms and a halide are formed, and the sacrificial metal layer isreplaced with a deposition metal layer such as titanium Ti or platinum Pt, by supplying ametal halide gas having a halogen coherence smaller than the halogen coherence of themetal atoms in the sacrificial metal layer. If such a process is used to form a capacitorlower electrode or form an ohmic layer on the bottom of a contact hole, a metal layercan be selectively formed at a temperature of 500° C. or lower.

代理机构：Marger Johnson & McCollom, P.C.

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