NON-VOLATILE MEMORY

专利名称：NON-VOLATILE MEMORY发明人：Jun Zheng申请号：US12170553申请日：20080710

公开号：US20100006916A1公开日：20100114

专利附图：

摘要：Non-volatile memory is described. The non-volatile memory includes a

substrate having a source region, a drain region and a channel region. The channel regionseparates the source region and the drain region. An electrically insulating layer isadjacent to the source region, drain region and channel region. A floating gate electrode

is adjacent to the electrically insulating layer. The electrically insulating layer separatesthe floating gate electrode from the channel region. The floating gate electrode has afloating gate major surface. A control gate electrode has a control gate major surfaceand the control gate major surface opposes the floating gate major surface. A vacuumlayer or gas layer at least partially separates the control gate major surface from thefloating gate major surface.

申请人：Jun Zheng

地址：Edina MN US

国籍：US

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