MURS120T3G 系列规格书推荐

Ultrafast Power Rectifiers

MURS105T3G, MURS110T3G, MURS115T3G,MURS120T3G, MURS140T3G, MURS160T3G,SURS8105T3G, SURS8110T3G, SURS8115T3G,SURS8120T3G, SURS8140T3G, SURS8160T3G,NRVUS110VT3G, NRVUS120VT3G,NRVUS160VT3G

Ideally suited for high voltage, high frequency rectification, or asfree wheeling and protection diodes in surface mount applicationswhere compact size and weight are critical to the system.

Features

www.onsemi.comULTRAFAST RECTIFIERS1.0 AMPERE, 50−600 VOLTS

SMBCASE 403A

MARKING DIAGRAM

AYWWU1xGG

Assembly Location*Year

Work WeekDevice Code

x = A, B, C, D, G, or J

G=Pb−Free Package

(Note: Microdot may be in either location)* The Assembly Location code (A) is front sideoptional. In cases where the Assembly Location isstamped in the package bottom (molding ejecterpin), the front side assembly code may be blank.

AYWWU1

====

••••••

Small Compact Surface Mountable Package with J−Bend LeadsRectangular Package for Automated HandlingHigh Temperature Glass Passivated Junction

Low Forward Voltage Drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C)NRVUS and SURS8 Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements;AEC−Q101 Qualified and PPAP Capable

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant

Mechanical Characteristics:

•Case: Epoxy, Molded

•Weight: 95 mg (Approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal•••

Leads are Readily Solderable

Lead and Mounting Surface Temperature for Soldering Purposes:260°C Max. for 10 Seconds

Polarity: Polarity Band Indicates Cathode LeadESD Rating:

♦Human Body Model = 3B (> 8 kV)♦Machine Model = C (> 400 V)

ORDERING INFORMATION

See detailed ordering and shipping information in the table onpage 2 of this data sheet.

DEVICE MARKING INFORMATION

See general marking information in the device marking tableon page 2 of this data sheet.

© Semiconductor Components Industries, LLC, 2017

April, 2017 − Rev. 15

1

Publication Order Number:

MURS120T3/D

MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series

MAXIMUM RATINGS

MURS/SURS8/NRVUS

Rating

Peak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking Voltage

Average Rectified Forward Current

Non−Repetitive Peak Surge Current, (Surge appliedat rated load conditions halfwave, single phase, 60 Hz)Operating Junction Temperature

SymbolVRRMVRWMVRIF(AV)IFSMTJ

105T350

110T3100

115T3150

120T3200

140T3400

160T3600

UnitV

1.0 @ TL = 155°C2.0 @ TL = 145°C

40

*65 to +175

1.0 @ TL = 150°C2.0 @ TL = 125°C

35

AA°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

MURS/SURS8/NRVUS

Rating

Thermal Resistance

Junction−to−Lead (TL = 25°C)

SymbolRqJL

105T3

110T3

115T3

13

120T3

140T3

160T3

Unit°C/W

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 1)(iF = 1.0 A, TJ = 25°C)(iF = 1.0 A, TJ = 150°C)

Maximum Instantaneous Reverse Current (Note 1)(Rated DC Voltage, TJ = 25°C)(Rated DC Voltage, TJ = 150°C)Maximum Reverse Recovery Time(iF = 1.0 A, di/dt = 50 A/ms)

(iF = 0.5 A, iR = 1.0 A, IR to 0.25 A)Maximum Forward Recovery Time

(iF = 1.0 A, di/dt = 100 A/ms, Rec. to 1.0 V)Typical Peak Reverse Recovery Current(IF = 1.0 A, di/dt = 50 A/ms)

vF

0.8750.712.0503525250.75

1.251.055.01507550501.60

V

iRmA

trr

ns

tfrIRM

nsA

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.1.Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

DEVICE MARKING AND ORDERING INFORMATION

Device

MURS105T3G,SURS8105T3G*

MURS110T3G, NRVUS110VT3G*SURS8110T3G*

MURS115T3G, SURS8115T3G*MURS120T3G, NRVUS120VT3G*SURS8120T3G*

MURS140T3G, SURS8140T3G*,MURS160T3G, NRVUS160VT3G*SURS8160T3G*

MarkingU1AU1BU1CU1DU1GU1J

PackageSMB(Pb−Free)SMB(Pb−Free)SMB(Pb−Free)SMB(Pb−Free)SMB(Pb−Free)SMB(Pb−Free)

Shipping†

2,500 Units / Tape & Reel2,500 Units / Tape & Reel2,500 Units / Tape & Reel2,500 Units / Tape & Reel2,500 Units / Tape & Reel2,500 Units / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.

*NRVUS and SURS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101Qualified and PPAP Capable.

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MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series

MURS105T3G, MURS110T3G, MURS115T3G, MURS120T3G,

SURS8105T3G, SURS8110T3G, SURS8115T3G, SURS8120T3G, NRVUS110VT3G, NRVUS120VT3G

10

IR, REVERSE CURRENT ( m A)7.05.03.0

175°Ci, INSTANTANEOUS FORWARD CURRENT (AMPS)F2.0

TC = 25°C1.00.70.50.30.2

5040C, CAPACITANCE (pF)353025201510

0.01

0.30.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

vF, INSTANTANEOUS VOLTAGE (VOLTS)

5.000102030405060708090100NOTE: TYPICALCAPACITANCE AT0 V = 45 pF100°C8040208.04.02.00.80.40.20.080.040.020.0080.0040.002

0

20

40

60

TJ = 175°CTJ = 100°CTJ = 25°C80100120140160180200

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Typical Reverse Current*

*The curves shown are typical for the highest voltage device in thevoltage grouping. Typical reverse current for lower voltage selectionscan be estimated from these same curves if applied VR is sufficientlybelow rated VR.

0.10.070.050.030.02

Figure 1. Typical Forward Voltage

VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Capacitance

PF(AV), AVERAGE POWER DISSIPATION (WATTS)IF(AV), AVERAGE FORWARD CURRENT (AMPS)109.08.07.06.05.04.03.02.01.0080

90

100

110

120

130

140

150

160

170

180

TC, CASE TEMPERATURE (°C)

SQUARE WAVEDCRATED VOLTAGE APPLIEDRqJC = 13°C/WTJ = 175°C5.0

TJ = 175°C4.0

(CAPACITANCE LOAD)PK+20II105.03.0

AV2.0DCSQUARE WAVE1.0000.51.01.52.02.5IF(AV), AVERAGE FORWARD CURRENT (AMPS)

Figure 4. Current Derating, CaseFigure 5. Power Dissipation

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MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series

MURS140T3G, MURS160T3G, SURS8140T3G, SURS8160T3G, NRVUS160VT3G

10

IR, REVERSE CURRENT ( m A)7.0

175°C5.0

100°C3.0

TC = 25°Ci , INSTANTANEOUS FORWARD CURRENT (AMPS)F2.0

4002008040208.04.02.00.80.40.20.080.040.020.0080.004

0

100

200

TJ = 175°CTJ = 100°CTJ = 25°C1.00.70.50.30.2

300400500600700

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Typical Reverse Current*

*The curves shown are typical for the highest voltage device in thevoltage grouping. Typical reverse current for lower voltage selectionscan be estimated from these same curves if applied VR is sufficientlybelow rated VR.25

NOTE: TYPICALCAPACITANCE AT0 V = 24 pF0.10.070.050.030.02

C, CAPACITANCE (pF)0.30.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

20

15

10

5.0

0.01

0

vF, INSTANTANEOUS VOLTAGE (VOLTS)

04.08.012162024283230Figure 6. Typical Forward Voltage

VR, REVERSE VOLTAGE (VOLTS)

Figure 8. Typical Capacitance

PF(AV), AVERAGE POWER DISSIPATION (WATTS)IF(AV), AVERAGE FORWARD CURRENT (AMPS)109.08.07.06.05.04.03.02.01.000

20

40

60

80

100

120

140

160

180

200

TC, CASE TEMPERATURE (°C)

SQUARE WAVEDCRATED VOLTAGE APPLIEDRqJC = 13°C/WTJ = 175°C5.0

(CAPACITANCE LOAD)IPK+20I105.0SQUARE WAVE4.0

AV3.0

TJ = 175°C2.0

DC1.0000.51.01.52.02.5IF(AV), AVERAGE FORWARD CURRENT (AMPS)

Figure 9. Current Derating, CaseFigure 10. Power Dissipation

www.onsemi.com4

MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series

PACKAGE DIMENSIONS

SMB

CASE 403A−03

ISSUE J

HEENOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.

3.DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.

DIMAA1bcDEHELL1MIN1.950.051.960.153.304.065.210.76MILLIMETERS

NOMMAX2.302.470.100.202.032.200.230.313.563.9.324.605.445.601.021.600.51 REFMIN0.0770.0020.0770.0060.1300.1600.2050.030INCHESNOM0.0910.0040.0800.0090.1400.1700.2140.0400.020 REFMAX0.0970.0080.0870.0120.1560.1810.2200.063bDPOLARITY INDICATOROPTIONAL AS NEEDEDALL1c

A1SOLDERING FOOTPRINT*

2.2610.02.7430.1082.1590.085SCALE 8:1

mmǓǒinches*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.

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