Ultrafast Power Rectifiers
MURS105T3G, MURS110T3G, MURS115T3G,MURS120T3G, MURS140T3G, MURS160T3G,SURS8105T3G, SURS8110T3G, SURS8115T3G,SURS8120T3G, SURS8140T3G, SURS8160T3G,NRVUS110VT3G, NRVUS120VT3G,NRVUS160VT3G
Ideally suited for high voltage, high frequency rectification, or asfree wheeling and protection diodes in surface mount applicationswhere compact size and weight are critical to the system.
Features
www.onsemi.comULTRAFAST RECTIFIERS1.0 AMPERE, 50−600 VOLTS
SMBCASE 403A
MARKING DIAGRAM
AYWWU1xGG
Assembly Location*Year
Work WeekDevice Code
x = A, B, C, D, G, or J
G=Pb−Free Package
(Note: Microdot may be in either location)* The Assembly Location code (A) is front sideoptional. In cases where the Assembly Location isstamped in the package bottom (molding ejecterpin), the front side assembly code may be blank.
AYWWU1
====
••••••
Small Compact Surface Mountable Package with J−Bend LeadsRectangular Package for Automated HandlingHigh Temperature Glass Passivated Junction
Low Forward Voltage Drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C)NRVUS and SURS8 Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements;AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant
Mechanical Characteristics:
•Case: Epoxy, Molded
•Weight: 95 mg (Approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal•••
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:260°C Max. for 10 Seconds
Polarity: Polarity Band Indicates Cathode LeadESD Rating:
♦Human Body Model = 3B (> 8 kV)♦Machine Model = C (> 400 V)
ORDERING INFORMATION
See detailed ordering and shipping information in the table onpage 2 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking tableon page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
April, 2017 − Rev. 15
1
Publication Order Number:
MURS120T3/D
MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series
MAXIMUM RATINGS
MURS/SURS8/NRVUS
Rating
Peak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking Voltage
Average Rectified Forward Current
Non−Repetitive Peak Surge Current, (Surge appliedat rated load conditions halfwave, single phase, 60 Hz)Operating Junction Temperature
SymbolVRRMVRWMVRIF(AV)IFSMTJ
105T350
110T3100
115T3150
120T3200
140T3400
160T3600
UnitV
1.0 @ TL = 155°C2.0 @ TL = 145°C
40
*65 to +175
1.0 @ TL = 150°C2.0 @ TL = 125°C
35
AA°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
MURS/SURS8/NRVUS
Rating
Thermal Resistance
Junction−to−Lead (TL = 25°C)
SymbolRqJL
105T3
110T3
115T3
13
120T3
140T3
160T3
Unit°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)(iF = 1.0 A, TJ = 25°C)(iF = 1.0 A, TJ = 150°C)
Maximum Instantaneous Reverse Current (Note 1)(Rated DC Voltage, TJ = 25°C)(Rated DC Voltage, TJ = 150°C)Maximum Reverse Recovery Time(iF = 1.0 A, di/dt = 50 A/ms)
(iF = 0.5 A, iR = 1.0 A, IR to 0.25 A)Maximum Forward Recovery Time
(iF = 1.0 A, di/dt = 100 A/ms, Rec. to 1.0 V)Typical Peak Reverse Recovery Current(IF = 1.0 A, di/dt = 50 A/ms)
vF
0.8750.712.0503525250.75
1.251.055.01507550501.60
V
iRmA
trr
ns
tfrIRM
nsA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.1.Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
DEVICE MARKING AND ORDERING INFORMATION
Device
MURS105T3G,SURS8105T3G*
MURS110T3G, NRVUS110VT3G*SURS8110T3G*
MURS115T3G, SURS8115T3G*MURS120T3G, NRVUS120VT3G*SURS8120T3G*
MURS140T3G, SURS8140T3G*,MURS160T3G, NRVUS160VT3G*SURS8160T3G*
MarkingU1AU1BU1CU1DU1GU1J
PackageSMB(Pb−Free)SMB(Pb−Free)SMB(Pb−Free)SMB(Pb−Free)SMB(Pb−Free)SMB(Pb−Free)
Shipping†
2,500 Units / Tape & Reel2,500 Units / Tape & Reel2,500 Units / Tape & Reel2,500 Units / Tape & Reel2,500 Units / Tape & Reel2,500 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.
*NRVUS and SURS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101Qualified and PPAP Capable.
www.onsemi.com2
MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series
MURS105T3G, MURS110T3G, MURS115T3G, MURS120T3G,
SURS8105T3G, SURS8110T3G, SURS8115T3G, SURS8120T3G, NRVUS110VT3G, NRVUS120VT3G
10
IR, REVERSE CURRENT ( m A)7.05.03.0
175°Ci, INSTANTANEOUS FORWARD CURRENT (AMPS)F2.0
TC = 25°C1.00.70.50.30.2
5040C, CAPACITANCE (pF)353025201510
0.01
0.30.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
vF, INSTANTANEOUS VOLTAGE (VOLTS)
5.000102030405060708090100NOTE: TYPICALCAPACITANCE AT0 V = 45 pF100°C8040208.04.02.00.80.40.20.080.040.020.0080.0040.002
0
20
40
60
TJ = 175°CTJ = 100°CTJ = 25°C80100120140160180200
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
*The curves shown are typical for the highest voltage device in thevoltage grouping. Typical reverse current for lower voltage selectionscan be estimated from these same curves if applied VR is sufficientlybelow rated VR.
0.10.070.050.030.02
Figure 1. Typical Forward Voltage
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
PF(AV), AVERAGE POWER DISSIPATION (WATTS)IF(AV), AVERAGE FORWARD CURRENT (AMPS)109.08.07.06.05.04.03.02.01.0080
90
100
110
120
130
140
150
160
170
180
TC, CASE TEMPERATURE (°C)
SQUARE WAVEDCRATED VOLTAGE APPLIEDRqJC = 13°C/WTJ = 175°C5.0
TJ = 175°C4.0
(CAPACITANCE LOAD)PK+20II105.03.0
AV2.0DCSQUARE WAVE1.0000.51.01.52.02.5IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Current Derating, CaseFigure 5. Power Dissipation
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MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series
MURS140T3G, MURS160T3G, SURS8140T3G, SURS8160T3G, NRVUS160VT3G
10
IR, REVERSE CURRENT ( m A)7.0
175°C5.0
100°C3.0
TC = 25°Ci , INSTANTANEOUS FORWARD CURRENT (AMPS)F2.0
4002008040208.04.02.00.80.40.20.080.040.020.0080.004
0
100
200
TJ = 175°CTJ = 100°CTJ = 25°C1.00.70.50.30.2
300400500600700
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Reverse Current*
*The curves shown are typical for the highest voltage device in thevoltage grouping. Typical reverse current for lower voltage selectionscan be estimated from these same curves if applied VR is sufficientlybelow rated VR.25
NOTE: TYPICALCAPACITANCE AT0 V = 24 pF0.10.070.050.030.02
C, CAPACITANCE (pF)0.30.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
20
15
10
5.0
0.01
0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
04.08.012162024283230Figure 6. Typical Forward Voltage
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Capacitance
PF(AV), AVERAGE POWER DISSIPATION (WATTS)IF(AV), AVERAGE FORWARD CURRENT (AMPS)109.08.07.06.05.04.03.02.01.000
20
40
60
80
100
120
140
160
180
200
TC, CASE TEMPERATURE (°C)
SQUARE WAVEDCRATED VOLTAGE APPLIEDRqJC = 13°C/WTJ = 175°C5.0
(CAPACITANCE LOAD)IPK+20I105.0SQUARE WAVE4.0
AV3.0
TJ = 175°C2.0
DC1.0000.51.01.52.02.5IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 9. Current Derating, CaseFigure 10. Power Dissipation
www.onsemi.com4
MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
HEENOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.
3.DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
DIMAA1bcDEHELL1MIN1.950.051.960.153.304.065.210.76MILLIMETERS
NOMMAX2.302.470.100.202.032.200.230.313.563.9.324.605.445.601.021.600.51 REFMIN0.0770.0020.0770.0060.1300.1600.2050.030INCHESNOM0.0910.0040.0800.0090.1400.1700.2140.0400.020 REFMAX0.0970.0080.0870.0120.1560.1810.2200.063bDPOLARITY INDICATOROPTIONAL AS NEEDEDALL1c
A1SOLDERING FOOTPRINT*
2.2610.02.7430.1082.1590.085SCALE 8:1
mmǓǒinches*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION
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