Method for manufacture of silicon carbide

专利名称：Method for manufacture of silicon carbide发明人：Masami Yamaguchi,Toshiyuki

Nakazima,Yoshiro Tajitsu,YoshiharuKitahama,Isamu Iwami

申请号：US06/321258申请日：19811113公开号：US04410502A公开日：19831018

摘要：Silicon carbide of improved quality is obtained by using a liquid silicic acid ormodified liquid silicic acid as a silicic substance and carbon in a powdered form, aprecursor of carbon in a powdered form, or a precursor of carbon in the form of asolution as a carbonaceous substance, and thermally treating these raw materials in anon-oxidative atmosphere. The silicon carbide thus produced is finely divided and in high-purity and suitable for use as raw material for the production of high-strength sinteredarticles.

申请人：ASAHI-DOW LIMITED

代理机构：Armstrong, Nikaido, Marmelstein & Kubovcik

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