专利名称：Improvements in or relating to electronic
circuits
发明人：Blake, Terence G.W.,van der Wagt, Jan P.申请号：EP97120551.3申请日：19971124公开号：EP0844617A2公开日：19980527
专利附图：
摘要：A two-port memory cell includes a bistable latch of two series connectedresonant tunnel diodes (RTDs) 34, 38 connected between supply (+Pwr) and substrate (-Pwr) voltages, the common node 36 of the two RTDs being coupled to both the reading
and writing functions of the cell. The writing function is achieved by a field effect passtransistor 30 whose active electrodes 25, 28 are tied between the common node of theRTDs and the bit writing bus WB and whose gate 26 is tied to the digital memory wordwriting bus WW. The reading function is achieved with a sense amplifier n-channeltransistor 46 with the source tied to the negative power supply, the gate 40 tied to thecommon node 36 of the RTDs and the drain 42 tied to an electrode 48 of an n-channelpass transistor 53 which connects the sense amplifier drain 42 to the read bit line RBdepending on the gate voltage of the pass transistor 53 whose gate 50 is tied to the readword line RW.
申请人：Texas Instruments Incorporated
地址：P.O. Box 655474, Mail Station 3999 Dallas, Texas 75265 US
国籍：US
代理机构：Schwepfinger, Karl-Heinz, Dipl.-Ing.
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