专利名称：Through Silicon Via Structure and Method发明人：Chen-Hua Yu,Shin-Puu Jeng,Wen-Chih
Chiou,Fang Wen Tsai,Chen-Yu Tsai
申请号：US14221001申请日：20140320
公开号：US20140203439A1公开日：20140724
专利附图：
摘要：A system and method for manufacturing a through silicon via is disclosed. Anembodiment comprises forming a through silicon via with a liner protruding from asubstrate. A passivation layer is formed over the substrate and the through silicon via,
and the passivation layer and liner are recessed from the sidewalls of the through siliconvia. Conductive material may then be formed in contact with both the sidewalls and a topsurface of the through silicon via.
申请人：TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
地址：Hsin-Chu TW
国籍：TW
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容