NCE2301

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NCE2301

NCE P-Channel Enhancement Mode Power MOSFET

The NCE2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GD GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package S Schematic diagram Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT-23 top view Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width 8 mm

Quantity 3000 units

2301 NCE2301 SOT-23 Ø180mm

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter Symbol Limit Unit Drain-Source Voltage -20 V VDS Gate-Source Voltage ±10 V VGS Drain Current-Continuous -3 A ID Drain Current -Pulsed (Note 1) -10 A IDM Maximum Power Dissipation 1 W PD Operating Junction and Storage Temperature Range -55 To 150 ℃ TJ,TSTG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient (Note 2)

RθJA

125

℃/W

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter Symbol Condition

Off Characteristics

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current

BVDSS IDSS

Min Typ Max Unit

VGS=0V ID=-250μA -20 V VDS=-20V,V= -1 μA GS0V Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0

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IGSS VGS(th) RDS(ON) gFS

NCE2301

VGS=±10V,V= ±100 nA DS0V VDS=VGS,ID=-250μA -0.4 -1 V VGS=-4.5V, I=55 110 mΩ D-3A =75 140 mΩ VGS=-2.5V, ID-2A VDS==-5V,ID-2.8A 9.5 S Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage

Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance

Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2)

Clss 405 PF VDS=-10V,VGS=0V,

Coss 75 PF F=1.0MHz

55 PF Crss

td(on) 11 nS tr VDD=-10V,ID=-1A 35 nS tf

10 nS VGS=-4.5V,RGEN=10Ω td(off) 30 nS Qg 3.3 12 nC VDS=-10V,ID=-3A,

Qgs 0.7 nC VGS=-2.5V

1.3 nC Qgd VSD

V= -1.2 V GS=0V,IS1.3A IS -1.3 A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production

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NCE2301

tontr90%TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

td(on)td(off)tofftf90%VOUT10%INVERTED10%90%VIN10%50%50%

PULSE WIDTH

Figure 2:Switching Waveforms

Figure 1:Switching Test Circuit

ID- Drain Current (A） PD Power(W)

TJ-Junction Temperature(℃)

TJ-Junction Temperature(℃)

Figure 3 Power Dissipation

Rdson On-Resistance(Ω) Figure 4 Drain Current

ID- Drain Current (A)

Vds Drain-Source Voltage (V)

ID- Drain Current (A)

Figure 5 Output CHARACTERISTICS Figure 6 Drain-Source On-Resistance

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NCE2301

Normalized On-Resistance ID- Drain Current (A)

Vgs Gate-Source Voltage (V)

TJ-Junction Temperature(℃)

Figure 7 Transfer Characteristics

Rdson On-Resistance(Ω) Figure 8 Drain-Source On-Resistance

Vgs Gate-Source Voltage (V)

C Capacitance (pF)

Vds Drain-Source Voltage (V)

Figure 9 Rdson vs Vgs

Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 10 Capacitance vs Vds

Qg Gate Charge (nC)

Vsd Source-Drain Voltage (V)

Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward

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NCE2301

ID- Drain Current (A)

Vds Drain-Source Voltage (V)

Figure 13 Safe Operation Area

r(t),Normalized Effective Transient Thermal Impedance

Square Wave Pluse Duration(sec)

Figure 14 Normalized Maximum Transient Thermal Impedance

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NCE2301

Dimensions in Millimeters (UNIT:mm)

SOT-23 PACKAGE INFORMATION

Symbol

Dimensions in Millimeters

MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8°

NOTES

1. All dimensions are in millimeters.

2. Tolerance ±0.10mm (4 mil) unless otherwise specified

3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane.

5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.

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NCE2301

ATTENTION:

■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that

require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE power representative nearest you before using any NCE power products described or contained herein in such applications.

■ NCE power assumes no responsibility for equipment failures that result from using products at values

that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE power products described or contained herein.

■ Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,

and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

■ NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.

■ In the event that any or all NCE power products(including technical data, services) described or contained herein are

controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including

photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE power Semiconductor CO.,LTD.

■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume

production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

■ Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the \"Delivery Specification\" for the NCE power product that you intend to use.

■ This catalog provides information as of Sep, 2010. Specifications and information herein are subject to change without notice.

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