Capacitor structure

专利名称：Capacitor structure

发明人：Keun-Bong Lee,Jung-Hyeon Kim申请号：US11998132申请日：20071128

公开号：US20080123245A1公开日：20080529

专利附图：

摘要：A capacitor structure includes an insulating layer, first conductive patterns,second conductive patterns, an insulating interlayer, third conductive patterns, and fourthconductive patterns. The first and second conductive patterns are alternately arrangedon the insulating layer to be spaced apart from one another. The first and second

conductive patterns have side faces where concave portions and convex portions areformed. The insulating interlayer is formed on the insulating layer to cover the first andsecond conductive patterns. The third and fourth conductive patterns are alternatelyarranged on the insulating interlayer to be spaced apart from one another. The third andfourth conductive patterns have side faces where concave portions and convex portionsare formed.

申请人：Keun-Bong Lee,Jung-Hyeon Kim

地址：Yongin-si KR,Hwaseong-si KR

国籍：KR,KR

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