FDN358资料

March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesSuperSOTTM-3 P-Channel logic level enhancement modepower field effect transistors are produced using Fairchild'sproprietary, high cell density, DMOS technology. This veryhigh density process is especially tailored to minimizeon-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portablephones, PCMCIA cards, and other battery powered circuitswhere fast switching, and low in-line power loss are neededin a very small outline surface mount package.-1.5 A, -30 V, RDS(ON) = 0.125 Ω @ VGS = -10 V RDS(ON) = 0.20 Ω @ VGS = - 4.5 V. High power version of industry SOT-23 package: identicalpin out to SOT-23; 30% higher power handling capability.High density cell design for extremely low RDS(ON).Exceptional on-resistance and maximum DC currentcapability. SuperSOT-3TMSuperSOT-6TMSuperSOT-8TMSO-8SOT-223SOIC-16 DD835SSuperSOT -3TMGGSAbsolute Maximum Ratings TA = 25oC unless other wise noted SymbolVDSSVGSSIDPDTJ,TSTGRθJARθJCParameterDrain-Source VoltageGate-Source Voltage Drain/Output Current - Continuous - PulsedMaximum Power Dissipation (Note 1a) (Note 1b)FDN358P-30±20-1.5-50.50.46-55 to 150UnitsVVAWOperating and Storage Temperature Range°CTHERMAL CHARACTERISTICSThermal Resistance, Junction-to-Ambient (Note 1a)Thermal Resistance, Junction-to-Case (Note 1) 250 75°C/W°C/W© 1998 Fairchild Semiconductor Corporation

FDN358P Rev.D

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Electrical Characteristics (TA = 25 OC unless otherwise noted )SymbolBVDSSParameterDrain-Source Breakdown VoltageBreakdown Voltage Temp. CoefficientZero Gate Voltage Drain CurrentConditionsVGS = 0 V, ID = -250 µAID = -250 µA, Referenced to 25 oCVDS = -24 V, VGS = 0 VTJ = 55°CIGSSFIGSSRVGS(th)Gate - Body Leakage, ForwardGate - Body Leakage, ReverseGate Threshold VoltageGate Threshold Voltage Temp. CoefficientStatic Drain-Source On-ResistanceVGS = 20 V, VDS = 0 VVGS = -20 V, VDS = 0 VVDS = VGS, ID = -250 µAID = -250 µA, Referenced to 25 oCVGS = -10 V, ID = -1.5 ATJ =125°CVGS = -4.5 V, ID = -1.2 AID(ON)gFSCissCossCrsstD(on)trtD(off)tfQgQgsQgdISVSD Note: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed bydesign while RθCA is determined by the user's board design. Typical RθJA using the board layouts shown below on FR-4 PCB in a still air environment : Min-30TypMaxUnitsVOFF CHARACTERISTICSmV/ oC-1-10100-100-1-1.530.110.150.175-5727015045VDD = -15 V, ID = -1 A,VGS = -10 V, RGEN = 6 Ω871710VDS = -5 V, ID = -1.5 A,VGS = -10 V6.511.1-0.42-0.74-1.21614271..10.1250.210.2AS pF pF pFnsnsnsnsnCnCnCAV-2µAµAnAnAVmV/ oC∆BVDSS/∆TJIDSS-28 ON CHARACTERISTICS (Note 2)∆VGS(th)/∆TJRDS(ON)ΩOn-State Drain CurrentForward TransconductanceInput CapacitanceOutput CapacitanceReverse Transfer CapacitanceTurn - On Delay TimeTurn - On Rise TimeTurn - Off Delay TimeTurn - Off Fall TimeTotal Gate ChargeGate-Source ChargeGate-Drain ChargeVGS = -4.5 V, VDS = -5 VVDS = -10 V, ID = -1.5 AVDS = -10 V, VGS = 0 V, f = 1.0 MHzDYNAMIC CHARACTERISTICSSWITCHING CHARACTERISTICS (Note 2)DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGSMaximum Continuous Drain-Source Diode Forward CurrentDrain-Source Diode Forward VoltageVGS = 0 V, IS = -0.42 A (Note 2) a. 250C/W when mounted on ao0.02 in pad of 2oz Cu.2 b. 270oC/W when mounted ona 0.001 in2 pad of 2oz Cu. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDN358P Rev.D

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Typical Electrical Characteristics 102.5-I D , DRAIN-SOURCE CURRENT (A) V = -10VGS -6.08R S ( O ) , NORMALIZEDDN -5.0 -4.5 -4.0 DRAIN-SOURCE ON-RESISTANCE2V = -4.0VGS -4.5 -3.51.5 -5.0 -6.0 -7.0 -8.0 -10102 -3.0102468001DS2345-V , DRAIN-SOURCE VOLTAGE (V)-I , DRAIN CURRENT (A)DFigure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with Drain Current and Gate1.6DRAIN-SOURCE ON-RESISTANCE 0.5R D S ( n ) , ON-RESISTANCE (OHM)o1.4I = -1.5ADV = -10VGSI = 0.75AD0.4R S ( O ) , NORMALIZEDDN1.20.310.2 T = 125°CA0.80.1 T = 25°CA0.6-500-250J255075100125150246810T , JUNCTION TEMPERATURE (°C)-V , GATE TO SOURCE VOLTAGE (V)GSFigure 3. On-Resistance Variation with Temperature.Figure 4. On-Resistance Variation with Gate-to-Source Voltage.V = -5VDS-ID , DRAIN CURRENT (A)8T = -55°CA25°C125°C-IS , REVERSE DRAIN CURRENT (A)1010V = 0VGST = 125°CJ25°C -55°C160.140.0120.001012GS34560.000100.20.40.60.811.21.4-V , GATE TO SOURCE VOLTAGE (V)-V , BODY DIODE FORWARD VOLTAGE (V)SDFigure 5. Transfer Characteristics.Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.FDN358P Rev.D

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Typical Electrical Characteristics 10-V G S , GATE-SOURCE VOLTAGE (V)700I = -1.5AD8V = -5VDS-15V-10VCAPACITANCE (pF)400C iss2006C oss1004502200.1f = 1 MHzV = 0 VGS 0.20.512510C rss0024Q , GATE CHARGE (nC)g6830-V , DRAIN TO SOURCE VOLTAGE (V)DSFigure 7. Gate Charge Characteristics.Figure 8. Capacitance Characteristics.105D-I , DRAIN CURRENT (A)50ITIM) LNS(ORD210.51ms10ms40POWER (W)10SINGLE PULSER =250° C/W θJAT = 25°CA0ms300.10.05V = -10VGSSINGLE PULSER = 250°C/WθJAT = 25°CAA0.20.5125 1s10sDC20100.010.110305000.00010.0010.010.1110100300- V , DRAIN-SOURCE VOLTAGE (V)DSSINGLE PULSE TIME (SEC)Figure 9. Maximum Safe Operating Area.Figure 10. Single Pulse Maximum Power Dissipation.1r(t), NORMALIZED EFFECTIVETRANSIENT THERMAL RESISTANCE0.50.20.10.050.020.010.0050.002 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk) R (t) = r(t) * R θJAθJA R = 250 °C/W θJA t 1 t 2T - T = P * R (t)JAθJADuty Cycle, D = t /t120.0010.010.1t , TIME (sec)11101003000.0010.0001Figure 11. Transient Thermal Response Curve.FDN358P Rev.D