ADM660ARZ资料

FEATURESADM660: Inverts or Doubles Input Supply VoltageADM8660: Inverts Input Supply Voltage100 mA Output CurrentShutdown Function (ADM8660)2.2 ␮F or 10 ␮F Capacitors0.3 V Drop at 30 mA Load+1.5 V to +7 V SupplyLow Power CMOS: 600 ␮A Quiescent CurrentSelectable Charge Pump Frequency (25 kHz/120 kHz)Pin Compatible Upgrade for MAX660, MAX665, ICL7660Available in 16-Lead TSSOP PackageAPPLICATIONSHandheld InstrumentsPortable ComputersRemote Data AcquisitionOp Amp Power SuppliesGENERAL DESCRIPTIONThe ADM660/ADM8660 is a charge-pump voltage converterthat can be used to either invert the input supply voltage givingVOUT = –VIN or double it (ADM660 only) giving VOUT = 2 ϫ VIN.Input voltages ranging from +1.5 V to +7 V can be inverted intoa negative –1.5 V to –7 V output supply. This inverting schemeis ideal for generating a negative rail in single power supplysystems. Only two small external capacitors are needed for thecharge pump. Output currents up to 50 mA with greater than90% efficiency are achievable, while 100 mA achieves greaterthan 80% efficiency.A Frequency Control (FC) input pin is used to select either25 kHz or 120 kHz charge-pump operation. This is used tooptimize capacitor size and quiescent current. With 25 kHzselected, a 10 µF external capacitor is suitable, while with 120kHzthe capacitor may be reduced to 2.2 µF. The oscillator frequencyon the ADM660 can also be controlled with an external capacitorconnected to the OSC input or by driving this input with anexternal clock. In applications where a higher supply voltage isdesired it is possible to use the ADM660 to double the inputvoltage. With input voltages from 2.5 V to 7 V, output voltagesfrom 5 V to 14 V are achievable with up to 100 mA output current.The ADM8660 features a low power shutdown (SD) pin insteadof the external oscillator (OSC) pin. This can be used to disablethe device and reduce the quiescent current to 300nA.REV.B

Information furnished by Analog Devices is believed to be accurate andreliable. However, no responsibility is assumed by Analog Devices for itsuse, nor for any infringements of patents or other rights of third parties thatmay result from its use. No license is granted by implication or otherwiseunder any patent or patent rights of Analog Devices. Trademarks andregistered trademarks are the property of their respective companies.

CMOS Switched-CapacitorVoltage ConvertersADM660/ADM8660TYPICAL CIRCUIT CONFIGURATIONS+1.5V TO +7VINPUTFCADM660V+CAP+OSCC1+10␮FGNDLVINVERTEDCAP–OUTNEGATIVEC2OUTPUT+10␮FVoltage Inverter Configuration (ADM660)+1.5V TO +7VINPUTFCADM8660V+CAP+C1+10␮FGNDLVINVERTEDCAP–OUTNEGATIVESHUTDOWNC2OUTPUTCONTROLSD+10␮FVoltage Inverter Configuration with Shutdown (ADM8660)The ADM660 is a pin compatible upgrade for the MAX660,MAX665, ICL7660, and LTC1046.The ADM660/ADM8660 is available in 8-lead DIP andnarrow-body SOIC. The ADM660 is also available in a 16-leadTSSOP package.ADM660/ADM8660 OptionsOptionADM660ADM8660Inverting ModeYYDoubling ModeYNExternal OscillatorYNShutdownNYPackage OptionsR-8YYN-8YYRU-16YNOne Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.Tel: 781/329-4700 www.analog.comFax: 781/326-8703© 2002 Analog Devices, Inc. All rights reserved.

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ADM660/ADM8660–SPECIFICATIONSParameterInput Voltage, V+3.51.52.5Supply Current0.62.5Output CurrentOutput Resistance (ADM660)Output Resistance (ADM8660)Output Resistance (ADM8660)Charge-Pump FrequencyOSC Input CurrentPower Efficiency (FC = Open) (ADM660)Power Efficiency (FC = Open) (ADM8660)Power Efficiency (FC = Open) (ADM8660)Power Efficiency (FC = Open) (ADM660)Power Efficiency (FC = Open) (ADM8660)Power Efficiency (FC = Open) (ADM8660)Power Efficiency (FC = Open)Voltage Conversion EfficiencyShutdown Supply Current, ISHDNShutdown Input Voltage, VSHDNShutdown Exit Time*C1 and C2 are low ESR (<0.2 W) electrolytic capacitors.High ESR degrade performance.Specifications subject to change without notice.(V+ = +5 V, C1, C2 = 10␮F,* TA = TMIN to TMAX, unlessotherwise noted.)

UnitVVVmAmAmAWWWkHzkHzmAmA%%%Test Conditions/CommentsRL = 1 kWInverting Mode, LV = OpenInverting Mode, LV = GNDDoubling Mode, LV = OUTNo LoadFC = Open (ADM660), GND (ADM8660)FC = V+, LV = OpenIL = 100 mAIL = 100 mA, TA = 25∞CIL = 100 mA, TA = –40∞C to +85∞CFC = Open (ADM660), GND (ADM8660)FC = V+FC = Open (ADM660), GND (ADM8660)FC = V+RL = 1 kW Connected from V+ to OUTRL = 1 kW Connected from V+ to OUT,TA = +25∞CRL = 1 kW Connected from V+ to OUT,TA = –40∞C to +85∞CRL = 500 W Connected from OUT to GNDRL = 500 W Connected from OUT to GND,TA = +25∞CRL = 500 W Connected from OUT to GND,TA = –40∞C to +85∞CIL = 100 mA to GNDNo LoadADM8660, SHDN = V+SHDN High = DisabledSHDN Low = EnabledIL = 100 mAMinTypMax7.07.07.014.5151516.51009925120±5±25909088.5909088.581.5992.40.850099.960.3593939494%%%%%mAVVms–2–REV. B

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ADM660/ADM8660

ABSOLUTE MAXIMUM RATINGS*(TA = +25°C, unless otherwise noted.)InputVoltage (V+ to GND, GND to OUT) . . . . . . . . +7.5 VLV Input Voltage . . . . . . . . . . (OUT – 0.3 V) to (V+, +0.3 V)FC and OSC Input Voltage . . . . . . . . . . . (OUT – 0.3 V) or (V+, –6 V) to (V+, +0.3 V)OUT, V+ Output Current (Continuous) . . . . . . . . . . . 120 mAOutput Short Circuit Duration to GND . . . . . . . . . . . 10 secsPower Dissipation, N-8 . . . . . . . . . . . . . . . . . . . . . . . 625 mW(Derate 8.3 mW/°C above +50°C)θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 120°C/WPower Dissipation, R-8 . . . . . . . . . . . . . . . . . . . . . . . 450 mW(Derate 6 mW/°C above +50°C)θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 170°C/WPower Dissipation, RU-16 . . . . . . . . . . . . . . . . . . . . . 500 mW(Derate 6 mW/°C above +50°C)θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 158°C/WOperating Temperature RangeIndustrial (A Version) . . . . . . . . . . . . . . . . –40°C to +85°CStorage Temperature Range . . . . . . . . . . . –65°C to +150°CLead Temperature Range (Soldering10sec) . . . . . . . . +300°CVapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215°CInfrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220°CESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2000 V*This is a stress rating only; functional operation of the device at these or any otherconditions above those indicated in the operation section of this specification is notimplied. Exposure to absolute maximum rating conditions for extended periodsmay affect device reliability.ORDERING GUIDEModelADM660ANADM660ARADM660ARUADM8660ANADM8660ARTemperatureRange–40°C to +85°C–40°C to +85°C–40°C to +85°C–40°C to +85°C–40°C to +85°CPackageOptions*N-8R-8RU-16N-8R-8*N = Plastic DIP; RU = Thin Shrink Small Outline; RN = Small Outline.CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readilyaccumulate on the human body and test equipment and can discharge without detection. Although theADM660/ADM8660 features proprietary ESD protection circuitry, permanent damage may occur ondevices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions arerecommended to avoid performance degradation or loss of functionality.REV. B–3–

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ADM660/ADM8660

PIN CONNECTIONS8-LeadFC1CAP+28V+FC1CAP+28V+7OSCTOP VIEWGND3(Not to Scale)6LV5OUTADM6607SDTOP VIEWGND3(Not to Scale)6LV5OUTADM8660CAP–4CAP–416-LeadNC1NC2FC3CAP+416NC15NCTOP VIEW13OSC(Not to Scale)12LVGND511OUT10NC9NCADM66014V+CAP–6NC7NC8NC = NO CONNECTPIN FUNCTION DESCRIPTIONSInverter ConfigurationDoubler Configuration (ADM660 Only)MnemonicFCFunctionFrequency Control Input for Internal Oscillatorand Charge Pump. With FC = Open (ADM660)or connected to GND (ADM8660), fCP = 25 kHz;with FC = V+, fCP = 120 kHz.Positive Charge-Pump Capacitor Terminal.Power Supply Ground.Negative Charge-Pump Capacitor Terminal.Output, Negative Voltage.Low Voltage Operation Input. Connect to GNDwhen input voltage is less than 3.5 V. Above3.5 V, LV may be connected to GND or leftunconnected.ADM660: Oscillator Control Input. OSC isconnected to an internal 15 pF capacitor. Anexternal capacitor may be connected to slow theoscillator. An external oscillator may also beused to overdrive OSC. The charge-pumpfrequency is equal to 1/2 the oscillator frequency.ADM8660: Shutdown Control Input. This in-put, when high, is used to disable the chargepump thereby reducing the power consumption.Positive Power Supply Input.MnemonicFCFunctionFrequency Control Input for Internal Oscillatorand Charge Pump. With FC = Open, fCP =25 kHz; with FC = V+, fCP = 120 kHz.Positive Charge-Pump Capacitor Terminal.Positive Input Supply.Negative Charge-Pump Capacitor Terminal.Ground.Low Voltage Operation Input. Connect to OUT.Must be left unconnected in this mode.Doubled Positive Output.CAP+GNDCAP–OUTLVOSCV+CAP+GNDCAP–OUTLVOSCSDV+–4–REV. B

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Typical Performance Characteristics–ADM660/ADM8660

3.02.5A VOLTAGE DOUBLERm LV = OUT – 2.0TNERRU1.5C YLPP1.0US LV = GND0.5LV = OPEN01.53.575.5.5SUPPLY VOLTAGE – VoltsTPC 1.Power Supply Current vs. Voltage–3.0100 EFFICIENCY–3.480stloV – EG–3.860% –A TYLCONVE T–4.240ICIUVFPOUTFTEUO–4.620–5.00204060801000LOAD CURRENT – mATPC 2.Output Voltage and Efficiency vs. Load Current1.6stloPOV R–1.2 DE V+ = +3.5V EGGATALTLO V+ = +2.5VOV 0.8 V+ = +4.5VVY L V+ = +1.5VTPUPPUTUS V+ = +5.5V OMO0.4RF0020406080100LOAD CURRENT – mATPC 3.Output Voltage Drop vs. Load CurrentREV. B100 IL = 10mA90%I L = 1mA–80 CYNIE70CIFF E60R IL = 50mAWEPO50I40L = 80mA301k10k100k1MCHARGE-PUMP FREQUENCY – HzTPC 4.Efficiency vs. Charge-Pump Frequency3.53.0Am2.5 – TNER2.0R LV = GNDUCVOLTAGE DOUBLER Y1.5LPPUS1.00.5 LV = GND VOLTAGE INVERTER01101001000CHARGE-PUMP FREQUENCY – kHzTPC 5.Power Supply Current vs. Charge-PumpFrequency120100V+ = +6.5VV+ = +5.5VV+ = +4.5V80 %– YCNV+ = +3.5VE60ICIFFV+ = +1.5VV+ = +2.5VE40200020406080100LOAD CURRENT – mATPC 6.Power Efficiency vs. Load Current–5–

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ADM660/ADM8660

5.04.5 LOAD = 1mA LOAD = 10mA4.0stloV3.5 – LOAD = 50mA EG3.0ATL2.5OV T2.0UPT1.5 LOAD = 80mAUO1.00.501101001000CHARGE-PUMP FREQUENCY – kHzTPC 7.Output Voltage vs. Charge-Pump Frequency30 ⍀–25 ECNTA20SISER E15CRUOS10 TUPTUO501.52.53.54.55.56.5SUPPLY VOLTAGE – VoltsTPC 8.Output Source Resistance vs. Supply Voltage30z LV = GNDHk – Y LV = OPENCNE20UQER FC = OPENF P OSC = OPENM C1, C2 = 10␮FUP-E10GRAHC01.52.53.54.55.56.5SUPPLY VOLTAGE – VoltsTPC 9.Charge-Pump Frequency vs. Supply Voltage35z30Hk – YC25NEUQ20ERFLV = GND PM15FC = OPENUC1, C2 = 10␮FP-EG10RAHC50–40–20020406080TEMPERATURE – CTPC 10.Charge-Pump Frequency vs. Temperature1kzHk – 100FC = V+LV = GNDCYNUEQREF10FC = OPEN LV = GNDMPU-PRGE1AHC0.11101001kCAPACITANCE – pFTPC 11.Charge-Pump Frequency vs. ExternalCapacitance140LV = GNDz120Hk – YC100NLV = OPENEUQ80ERF PM60UFC = V+P-EG40OSC = OPENC1,C2 = 2.2␮FRAHC20033.544.555.566.57SUPPLY VOLTAGE – VoltsTPC 12.Charge-Pump Frequency vs. Supply Voltage–6–REV. B

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ADM660/ADM8660

16014060CHARGE-PUMP FREQUENCY – kHz120100806040200–40LV = GNDFC = V+C1, C2 = 2.2␮FOUTPUT SOURCE RESISTANCE – ⍀504030V+ = +1.5V20V+ = +3V10V+ = +5V–200204060TEMPERATURE – C801000–40–200204060TEMPERATURE – C80100TPC 13.Charge-Pump Frequency vs. TemperatureTPC 14.Output Resistance vs. TemperatureGENERAL INFORMATIONThe ADM660/ADM8660 is a switched capacitor voltage con-verter that can be used to invert the input supply voltage. TheADM660 can also be used in a voltage doubling mode. Thevoltage conversion task is achieved using a switched capacitortechnique using two external charge storage capacitors. An on-board oscillator and switching network transfers charge betweenthe charge storage capacitors. The basic principle behind thevoltage conversion scheme is illustrated in Figures 1 and 2.V+S1S2CAP+S3Switched Capacitor Theory of OperationAs already described, the charge pump on the ADM660/ADM8660uses a switched capacitor technique in order to invert or doublethe input supply voltage. Basic switched capacitor theory isdiscussed below.A switched capacitor building block is illustrated in Figure 3.With the switch in position A, capacitor C1 will charge to voltageV1. The total charge stored on C1 is q1 = C1V1. The switch isthen flipped to position B discharging C1 to voltage V2. Thecharge remaining on C1 is q2 = C1V2. The charge transferredto the output V2 is, therefore, the difference between q1 andq2, so ∆q = q1–q2 = C1 (V1–V2).V1ABC2C1RLV2+C1S4CAP–Φ1Φ2+ 2OSCILLATOR+OUT = –V+C2Figure 1.Voltage Inversion PrincipleV+S1S2CAP+S3Figure 3.Switched Capacitor Building Block+V+VOUT = 2V+C2+C1S4CAP–Φ1Φ2+ 2OSCILLATORAs the switch is toggled between A and B at a frequency f, thecharge transfer per unit time or current is:I=f(∆q)=f(C1)(V1–V2) Therefore,

Figure 2.Voltage Doubling PrincipleI=(V1–V2)/(1/fC1)=(V1–V2)/(REQ)

Figure 1 shows the voltage inverting configuration, while Figure 2shows the configuration for voltage doubling. An oscillatorgenerating antiphase signals φ1 and φ2 controls switches S1, S2,and S3, S4. During φ1, switches S1 and S2 are closed chargingC1 up to the voltage at V+. During φ2, S1 and S2 open and S3and S4 close. With the voltage inverter configuration during φ2,the positive terminal of C1 is connected to GND via S3 and thenegative terminal of C1 connects to VOUT via S4. The net resultis voltage inversion at VOUT wrt GND. Charge on C1 is trans-ferred to C2 during φ2. Capacitor C2 maintains this voltageduring φ1. The charge transfer efficiency depends on the on-resistance of the switches, the frequency at which they are beingswitched, and also on the equivalent series resistance (ESR) ofthe external capacitors. The reason for this is explained in thefollowing section. For maximum efficiency, capacitors with lowESR are, therefore, recommended.The voltage doubling configuration reverses some of the con-nections, but the same principle applies.REV. B

–7–

where REQ = 1/fC1The switched capacitor may, therefore, be replaced by an equivalentresistance whose value is dependent on both the capacitor sizeand the switching frequency. This explains why lower capacitorvalues may be used with higher switching frequencies. It shouldbe remembered that as the switching frequency is increased thepower consumption will increase due to some charge being lostat each switching cycle. As a result, at high frequencies, the powerefficiency starts decreasing. Other losses include the resistanceof the internal switches and the equivalent series resistance (ESR)of the charge storage capacitors.REQV1C2REQ = 1/fC1RLV2Figure 4.Switched Capacitor Equivalent Circuit元器件交易网www.cecb2b.com

ADM660/ADM8660

Inverting Negative Voltage GeneratorTable II.ADM8660 Charge-Pump Frequency SelectionFigures 5 and 6 show the ADM660/ADM8660 configured togenerate a negative output voltage. Input supply voltages from1.5 V up to 7 V are allowable. For supply voltage less than 3 V,LV must be connected to GND. This bypasses the internalregulator circuitry and gives best performance in low voltageapplications. With supply voltages greater than 3 V, LV maybe either connected to GND or left open. Leaving it open facili-tates direct substitution for the ICL7660.+1.5V TO +7VINPUTFCC1+10␮FCAP+GNDCAP–FCGNDV+GND or V+GNDOSCOpenOpenExt CapExt CLKCharge PumpC1, C225 kHz10 µF120 kHz2.2 µFSee Typical CharacteristicsExt CLK Frequency/2+1.5V TO +7VINPUTCLK OSCFCADM660V+OSCLVOUTC2+10␮FINVERTEDNEGATIVEOUTPUTADM660ADM8660V+OSCLVOUTCMOS GATEC1+CAP+GNDCAP–+C2INVERTEDNEGATIVEOUTPUTFigure 5.ADM660 Voltage Inverter Configuration+1.5V TO +7VINPUTFCC1+10␮FSHUTDOWNCONTROLCAP+GNDCAP–SDLVOUTC2INVERTEDNEGATIVEOUTPUTFigure 7.ADM660/ADM8660 External OscillatorVoltage Doubling ConfigurationADM8660V++10␮FFigure 8 shows the ADM660 configured to generate increasedoutput voltages. As in the inverting mode, only two externalcapacitors are required. The doubling function is achieved byreversing some connections to the device. The input voltage isapplied to the GND pin and V+ is used as the output. Inputvoltages from 2.5 V to 7 V are allowable. In this configuration,pins LV, OUT must be connected to GND.The unloaded output voltage in this configuration is 2 (VIN).Output resistance and ripple are similar to the voltage invertingconfiguration.Note that the ADM8660 cannot be used in the voltagedoubling configuration.FC+2.5VTO +7VINPUTFigure 6.ADM8660 Voltage Inverter ConfigurationOSCILLATOR FREQUENCY+CAP+10␮FGNDCAP–LVOUTIf a charge-pump frequency other than the two fixed values isdesired, this is made possible by the OSC input, which caneither have a capacitor connected to it or be overdriven by anexternal clock. Refer to the Typical Performance Characteris-tics, which shows the variation in charge-pump frequency versuscapacitor size. The charge-pump frequency is one-half the oscil-lator frequency applied to the OSC pin.If an external clock is used to overdrive the oscillator, its levelsshould swing to within 100 mV of V+ and GND. A CMOSdriver is, therefore, suitable. When OSC is overdriven, FC hasno effect but LV must be grounded.Note that overdriving is permitted only in the voltage inverterconfiguration.Table I.ADM660 Charge-Pump Frequency SelectionFigure 8.Voltage Doubler ConfigurationShutdown InputThe ADM8660 contains a shutdown input that can be used todisable the device and thus reduce the power consumption. Alogic high level on the SD input shuts the device down reducingthe quiescent current to 0.3 µA. During shutdown, the outputvoltage goes to 0 V. Therefore, ground referenced loads are notpowered during this state. When exiting shutdown, it takesseveral cycles (approximately 500 µs) for the charge pump toreach its final value. If the shutdown function is not being used,then SD should be hardwired to GND.Capacitor SelectionFCOpenV+Open or V+OpenOSCOpenOpenExt CapExt CLKCharge PumpC1, C225 kHz10 µF120 kHz2.2 µFSee Typical CharacteristicsExt CLK Frequency/2–8–

The optimum capacitor value selection depends the charge-pumpfrequency. With 25 kHz selected, 10 µF capacitors are recommended,while with 120 kHz selected, 2.2 µF capacitors may be used.Other frequencies allow other capacitor values to be used. Formaximum efficiency in all cases, it is recommended that capaci-tors with low ESR are used for the charge-pump. Low ESRcapacitors give both the lowest output resistance and lowestripple voltage. High output resistance degrades the overall powerefficiency and causes voltage drops, especially at high outputREV. B

+The internal charge-pump frequency may be selected to beeither 25 kHz or 120 kHz using the Frequency Control (FC)input. With FC unconnected (ADM660) or connected to GND(ADM8660), the internal charge pump runs at 25 kHz while, ifFC is connected to V+, the frequency is increased by a factor offive. Increasing the frequency allows smaller capacitors to beused for equivalent performance or, if the capacitor size is un-changed, it results in lower output impedance and ripple.ADM660V+OSC10␮FDOUBLEDPOSITIVEOUTPUT元器件交易网www.cecb2b.com

ADM660/ADM8660

current levels. The ADM660/ADM8660 is tested using lowESR, 10 µF, capacitors for both C1 and C2. Smaller values ofC1 increase the output resistance, while increasing C1 willreduce the output resistance. The output resistance is also depen-dent on the internal switches on resistance as well as thecapacitors ESR, so the effect of increasing C1 becomes negligiblepast a certain point.Figure 9 shows how the output resistance varies with oscillatorfrequency for three different capacitor values. At low oscillatorfrequencies, the output impedance is dominated by the 1/fCterm. This explains why the output impedance is higher forsmaller capacitance values. At high oscillator frequencies, the1/fC term becomes insignificant and the output impedance isdominated by the internal switches on resistance. From an out-put impedance viewpoint, therefore, there is no benefit to begained from using excessively large capacitors.500C1 = C2 = 2.2␮F400Capacitor C2The output capacitor size C2 affects the output ripple. Increas-ing the capacitor size reduces the peak-to-peak ripple. The ESRaffects both the output impedance and the output ripple.Reducing the ESR reduces the output impedance and ripple.For convenience it is recommended that both C1 and C2 be thesame value.Table III.Capacitor SelectionCharge-PumpFrequency25 kHz120 kHzCapacitorC1, C210 µF2.2 µFPower Efficiency and Oscillator Frequency Trade-OffOUTPUT RESISTANCE – ⍀300C1 = C2 = 1␮F200C1 = C2 = 10␮F100While higher switching frequencies allow smaller capacitors tobe used for equivalent performance, or improved performancewith the same capacitors, there is a trade-off to consider. As theoscillator frequency is increased, the quiescent current increases.This happens as a result of a finite charge being lost at eachswitching cycle. The charge loss per unit cycle at very highfrequencies can be significant, thereby reducing the power effi-ciency. Since the power efficiency is also degraded at low oscillatorfrequencies due to an increase in output impedance, this meansthat there is an optimum frequency band for maximum powertransfer. Refer to the Typical Performance Characteristics section.Bypass Capacitor00.1110OSCILLATOR FREQUENCY – kHz100Figure 9.Output Impedance vs. Oscillator FrequencyThe ac impedance of the ADM660/ADM8660 may be reducedby using a bypass capacitor on the input supply. This capacitorshould be connected between the input supply and GND. Itwill provide instantaneous current surges as required. Suitablecapacitors of 0.1 µF or greater may be used.REV. B–9–

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ADM660/ADM8660

OUTLINE DIMENSIONS8-Lead Plastic Dual-in-Line Package [PDIP](N-8)Dimensions shown in inches and (millimeters)0.375 (9.53)0.365 (9.27)0.355 (9.02)858-Lead Standard Small Outline Package [SOIC]Narrow Body(R-8)Dimensions shown in millimeters and (inches)5.00 (0.1968)4.80 (0.1890)140.295 (7.49)0.285 (7.24)0.275 (6.98)0.100 (2.54)BSC0.180(4.57)MAX0.015(0.38)MINSEATINGPLANE0.060 (1.52)0.050 (1.27)0.045 (1.14)0.325 (8.26)0.310 (7.87)0.300 (7.62)4.00 (0.1574)3.80 (0.1497)0.150 (3.81)0.135 (3.43)0.120 (3.05)81546.20 (0.2440)5.80 (0.2284)1.27 (0.0500)BSC0.25 (0.0098)0.10 (0.0040)COPLANARITYSEATING0.10PLANE1.75 (0.0688)1.35 (0.0532)0.50 (0.0196)؋ 45؇0.25 (0.0099)0.150 (3.81)0.130 (3.30)0.110 (2.79)0.022 (0.56)0.018 (0.46)0.014 (0.36) 0.015 (0.38)0.010 (0.25)0.008 (0.20)0.51 (0.0201)0.33 (0.0130)8؇0.25 (0.0098)0؇1.27 (0.0500)0.41 (0.0160)0.19 (0.0075)COMPLIANT TO JEDEC STANDARDS MO-095AACONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS(IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FORREFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN COMPLIANT TO JEDEC STANDARDS MS-012AACONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FORREFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN16-Lead Thin Shrink Small Outline Package [TSSOP](RU-16)Dimensions shown in millimeters5.105.004.901694.504.404.30186.40BSCPIN 10.150.050.65BSC0.300.19COPLANARITY0.101.20MAX0.200.09SEATINGPLANE8؇0؇0.750.600.45COMPLIANT TO JEDEC STANDARDS MO-153AB–10–REV. B

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ADM660/ADM8660

Revision HistoryLocation12/02—Data Sheet changed from REV. A to REV. B.PageRenumbered TPCs and Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UNIVERSALEdits to SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2Updated ABSOLUTE MAXIMUM RATINGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3Updated OUTLINE DIMENSIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10REV. B–11–

–12–

)B(20/21–0–28000C.A.S.U NI DETNIRP元器件交易网www.cecb2b.com