专利名称：Scalable and high yield synthesis of
transition metal bis-diazabutadienes
发明人：Patricio E. Romero申请号：US14053249申请日：20131014公开号：US09067958B2公开日：20150630
专利附图：
摘要：The present disclosure is directed at the synthesis of transition metal bis-diazabutadienes as precursors to enable atomic layer deposition (ALD) or chemical vapordeposition (CVD) of transition metals on metallic surfaces. The transition metal bis-
diazabutadienes may be prepared in a two-step synthetic procedure at relatively highyields and are particularly suitable for industrial scale-up.
申请人：Intel Corporation
地址：Santa Clara CA US
国籍：US
代理机构：Grossman, Tucker, Perreault & Pfleger, PLLC
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