专利名称：Method for forming a protecting film on
side walls of a semiconductor device
发明人：Hajime Imai,Masahiro Morimoto,Takao
Fujiwara
申请号：US06/3916申请日：19820618公开号：US044343A公开日：19840306
摘要：A method for forming a protecting film on the side walls of a semiconductordevice, e.g. a semiconductor laser, having an exposed PN junction at the side walls thereofis carried out by the following steps. The semiconductor device is placed on a substratetarget made of a protecting film material. Energetic particles are impinged against thesubstrate target. Particles of the material are emitted from the substrate target anddeposited on only the side walls to form the protecting film.
申请人：FUJITSU LIMITED
代理机构：Staas & Halsey
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