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METHOD OF PREPARING AN ISOLATION REGION IN A HIGH

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专利名称：METHOD OF PREPARING AN ISOLATION

REGION IN A HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE

发明人：Igor Peidous,Jeffrey L. Libbert申请号：US17034159申请日：20200928

公开号：US20210013091A1公开日：20210114

专利附图：

摘要：A multilayer composite structure and a method of preparing a multilayercomposite structure are provided. The multilayer composite structure comprises a

semiconductor handle substrate having a minimum bulk region resistivity of at leastabout 500 ohm-cm and an isolation region that impedes the transfer of charge carriersalong the surface of the handle substrate and reduces parasitic coupling between RFdevices.

申请人：GlobalWafers Co., Ltd.

地址：Hsinchu TW

国籍：TW

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