Quantum dot infrared photodetector and method for

专利名称：Quantum dot infrared photodetector and

method for fabricating the same

发明人：Shih-Yen Lin,Shiang-Feng Tang,Si-Chen

Lee,Chieh-Hsiung Kuan

申请号：US09846173申请日：20010430

公开号：US20020094597A1公开日：20020718

专利附图：

摘要：A method for fabricating a quantum dot infrared photodetector by usingmolecular beam epitaxy is provided. The method includes steps of growing a first gallium

arsenide layer as a buffer layer on a gallium arsenide substrate, growing a first undopedaluminum gallium arsenide layer as a blocking layer on the first gallium arsenide layer,growing a quantum dot structure layer on the first undoped aluminum gallium arsenidelayer at a specific temperature, and growing a second gallium arsenide layer as a contactlayer on the quantum dot structure layer.

申请人：NATIONAL SCIENCE COUNCIL

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