专利名称：Substrate potential detecting circuit发明人：Kuroda, Tadahiro申请号：EP97101113.5申请日：19970124公开号：EP0786810B1公开日：20020807
摘要：The disclosed substrate potential detecting circuit can reduce both the powerconsumption and the pattern area thereof. The substrate potential detecting circuitcomprises: a series circuit composed of a plurality of same-conductivity type MOStransistors (21, ... 2n). Each transistor has a source terminal connected to a substrateterminal thereof and a drain terminal connected to a gate terminal thereof. Further, thechannel widths of all the MOS transistors are determined equal to each other and soselected that all the transistors can be operative in a sub-threshold region, respectively.
申请人：TOSHIBA KK
地址：JP
国籍：JP
代理机构：Zangs, Rainer E., Dipl.-Ing.
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