专利名称：Method of depositing a superconductor
layer on a substrate through anintermediate layer of doped CeO.sub.2
发明人：Christian Belouet,Didier Chambonnet申请号：US08/542881申请日：19951013公开号：US05595960A公开日：19970121
摘要：A method of preparing a substrate with a view to depositing a thin layer of asuperconductive material thereon, wherein an operation is performed of depositing onthe substrate an intermediate material having the property of having a crystal latticeconstant that is a function of the percentage of a doping element, the depositingoperation being initiated with a concentration of the doping element such that the latticeconstant of the intermediate material is equal to or as close as possible to the latticeconstant of the substrate, the proportion of the doping element being continuouslyvaried during the depositing operation to a proportion of the doping element such thatthe lattice constant of the intermediate material is equal to or as close as possible to thelattice constant of the superconductive material.
申请人：ALCATEL ALSTHOM COMPAGNIE GENERALE D'ELECTRICITE
代理机构：Sughrue, Mion, Zinn, Macpeak & Seas
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