专利名称：Method of preparing a film layer-by-layer
using plasma enhanced atomic layerdeposition
发明人：Tadahiro Ishizaka申请号：US11206994申请日：20050819公开号：US07338901B2公开日：20080304
专利附图：
摘要：A method for forming a thin film on a substrate layer by layer using plasmaenhanced atomic layer deposition is described. The method comprises using a low power
reduction step for at least one cycle in order to substantially avoid partial layer filmgrowth, followed by using a high power reduction step for each cycle thereafter in orderto increase deposition rate.
申请人：Tadahiro Ishizaka
地址：Watervliet NY US
国籍：US
代理机构：Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
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