MUN5213DW1T1G资料

MUN5211DW1T1 Series

Preferred Devices

Dual Bias ResistorTransistors

NPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base−emitter resistor. These digital transistors aredesigned to replace a single device and its external resistor biasnetwork. The BRT eliminates these individual components byintegrating them into a single device. In the MUN5211DW1T1 series,two BRT devices are housed in the SOT−363 package which is idealfor low power surface mount applications where board space is at apremium.

Features

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(3)R1Q1(2)R2(1)Q2R2(4)R1(5)(6)••••

Simplifies Circuit DesignReduces Board Space

Reduces Component CountPb−Free Packages are Available

61MAXIMUM RATINGS

(TA = 25°C unless otherwise noted, common for Q1 and Q2)

Rating

Collector-Base VoltageCollector-Emitter VoltageCollector Current

SymbolVCBOVCEOIC

Value5050100

UnitVdcVdcmAdc

SOT−363CASE 419BSTYLE 1MARKING DIAGRAM6xx M GG1xx= Device CodeM= Date Code*G= Pb−Free Package(Note: Microdot may be in either location)*Date Code orientation and/or position mayvary depending upon manufacturing location.THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)Total Device DissipationTA = 25°C

Derate above 25°CThermal Resistance,Junction-to-Ambient

Characteristic

(Both Junctions Heated)Total Device DissipationTA = 25°C

Derate above 25°CThermal Resistance,Junction-to-AmbientThermal Resistance,Junction-to-Lead

SymbolPD

Max187 (Note 1)256 (Note 2)1.5 (Note 1)2.0 (Note 2)670 (Note 1)490 (Note 2)

Max250 (Note 1)385 (Note 2)2.0 (Note 1)3.0 (Note 2)493 (Note 1)325 (Note 2)188 (Note 1)208 (Note 2)

UnitmWmW/°C°C/W

RqJA

SymbolPD

UnitmWmW/°C°C/W°C/W

DEVICE MARKING INFORMATION

See specific marking information in the device marking tableon page 2 of this data sheet.

RqJARqJL

Preferred devices are recommended choices for future useand best overall value.

Junction and Storage TemperatureTJ, Tstg−55 to +150°CMaximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously. If these limits areexceeded, device functional operation is not implied, damage may occur andreliability may be affected.1.FR−4 @ Minimum Pad2.FR−4 @ 1.0 x 1.0 inch Pad

© Semiconductor Components Industries, LLC, 2005

1

December, 2005 − Rev. 7

Publication Order Number:

MUN5211DW1T1/D

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MUN5211DW1T1 Series

DEVICE MARKING AND RESISTOR VALUES

Device

MUN5211DW1T1MUN5211DW1T1GMUN5212DW1T1MUN5212DW1T1GMUN5213DW1T1MUN5213DW1T1GMUN5214DW1T1MUN5214DW1T1GMUN5215DW1T1MUN5215DW1T1GMUN5216DW1T1MUN5216DW1T1GMUN5230DW1T1MUN5230DW1T1GMUN5231DW1T1MUN5231DW1T1GMUN5232DW1T1MUN5232DW1T1GMUN5233DW1T1MUN5233DW1T1GMUN5234DW1T1MUN5234DW1T1GMUN5235DW1T1MUN5235DW1T1GMUN5236DW1T1MUN5236DW1T1GMUN5237DW1T1MUN5237DW1T1G

PackageSOT−363SOT−363(Pb−Free)SOT−363SOT−363(Pb−Free)SOT−363SOT−363(Pb−Free)SOT−363SOT−363(Pb−Free)SOT−363SOT−363(Pb−Free)SOT−363SOT−363(Pb−Free)SOT−363SOT−363(Pb−Free)SOT−363SOT−363(Pb−Free)SOT−363SOT−363(Pb−Free)SOT−363SOT−363(Pb−Free)SOT−363SOT−363(Pb−Free)SOT−363SOT−363(Pb−Free)SOT−363SOT−363(Pb−Free)SOT−363SOT−363(Pb−Free)

Marking7A7A7B7B7C7C7D7D7E7E7F7F7G7G7H7H7J7J7K7K7L7L7M7M7N7N7P7P

R1 (K)101022224747101010104.74.71.01.02.22.24.74.74.74.722222.22.21001004747

R2 (K)1010222247474747∞∞∞∞1.01.02.22.24.74.74747474747471001002222

Shipping†3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel3000/Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.

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MUN5211DW1T1 Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)

Characteristic

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0)Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)Emitter-Base Cutoff Current(VEB = 6.0 V, IC = 0)

MUN5211DW1T1, GMUN5212DW1T1, GMUN5213DW1T1, GMUN5214DW1T1, GMUN5215DW1T1, GMUN5216DW1T1, GMUN5230DW1T1, GMUN5231DW1T1, GMUN5232DW1T1, GMUN5233DW1T1, GMUN5234DW1T1, GMUN5235DW1T1, GMUN5236DW1T1, GMUN5237DW1T1, G

ICBOICEOIEBO

−−−−−−−−−−−−−−−−5050

−−−−−−−−−−−−−−−−−−

1005000.50.20.10.20.91.94.32.31.50.180.130.20.050.13−−

nAdcnAdcmAdc

Symbol

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)

Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)3.Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%ON CHARACTERISTICS (Note 4)DC Current Gain

(VCE = 10 V, IC = 5.0 mA)

MUN5211DW1T1, GMUN5212DW1T1, GMUN5213DW1T1, GMUN5214DW1T1, GMUN5215DW1T1, GMUN5216DW1T1, GMUN5230DW1T1, GMUN5231DW1T1, GMUN5232DW1T1, GMUN5233DW1T1, GMUN5234DW1T1, GMUN5235DW1T1, GMUN5236DW1T1, GMUN5237DW1T1, G

V(BR)CBOV(BR)CEO

VdcVdc

hFE

356080801601603.08.0158080808080601001401403503505.01530200150140150140−−−−−−−−−−−−−−

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MUN5211DW1T1 Series

Collector-Emitter Saturation Voltage(IC = 10 mA, IB = 0.3 mA)

VCE(sat)

MUN5211DW1T1, GMUN5212DW1T1, GMUN5213DW1T1, GMUN5214DW1T1, GMUN5235DW1T1, GMUN5236DW1T1, GMUN5230DW1T1, GMUN5231DW1T1, GMUN5237DW1T1, GMUN5215DW1T1, GMUN5216DW1T1, GMUN5232DW1T1, GMUN5233DW1T1, GMUN5234DW1T1, G

VOL

MUN5211DW1T1, GMUN5212DW1T1, GMUN5214DW1T1, GMUN5215DW1T1, GMUN5216DW1T1, GMUN5230DW1T1, GMUN5231DW1T1, GMUN5232DW1T1, GMUN5233DW1T1, GMUN5234DW1T1, GMUN5235DW1T1, GMUN5213DW1T1, GMUN5236DW1T1, GMUN5237DW1T1, G

−−−−−−−−−−−−−−

−−−−−−−−−−−−−−

0.20.20.20.20.20.20.20.20.20.20.20.20.20.2

−−−−−−−−−−−−−−

−−−−−−−−−−−−−−

0.250.250.250.250.250.250.250.250.250.250.250.250.250.25

VdcVdc

(IC = 10 mA, IB = 5 mA)(IC = 10 mA, IB = 1 mA)

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)

4.Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

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MUN5211DW1T1 Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued)

Characteristic

ON CHARACTERISTICS (Note 5) (Continued)Output Voltage (off)

(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

VOH

MUN5211DW1T1, GMUN5212DW1T1, GMUN5213DW1T1, GMUN5214DW1T1, GMUN5233DW1T1, GMUN5234DW1T1, GMUN5235DW1T1, GMUN5230DW1T1, GMUN5215DW1T1, GMUN5216DW1T1, GMUN5231DW1T1, GMUN5232DW1T1, GMUN5236DW1T1, GMUN5237DW1T1, GMUN5211DW1T1, GMUN5212DW1T1, GMUN5213DW1T1, GMUN5214DW1T1, GMUN5215DW1T1, GMUN5216DW1T1, GMUN5230DW1T1, GMUN5231DW1T1, GMUN5232DW1T1, GMUN5233DW1T1, GMUN5234DW1T1, GMUN5235DW1T1, GMUN5236DW1T1, GMUN5237DW1T1, G

R1

4.94.94.94.94.94.94.94.94.94.94.94.94.94.97.015.432.97.07.03.30.71.53.33.315.41.7032.90.80.17−0.80.0550.380.0381.7

−−−−−−−−−−−−−−10224710104.71.02.24.74.7222.2100471.00.21−1.00.10.470.0472.1

−−−−−−−−−−−−−−1328.661.113136.11.32.96.16.128.62.8613061.11.20.25−1.20.1850.560.0562.6

k WVdc

Symbol

Min

Typ

Max

Unit

(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)

Input Resistor

Resistor RatioMUN5211DW1T1, G/MUN5212DW1T1, G/

MUN5213DW1T1, G/MUN5236DW1T1, GMUN5214DW1T1, G

MUN5215DW1T1, G/MUN5216DW1T1, G

MUN5230DW1T1, G/MUN5231DW1T1, G/MUN5232DW1T1, GMUN5233DW1T1, GMUN5234DW1T1, GMUN5235DW1T1, GMUN5237DW1T1, G5.Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

R1/R2

ALL MUN5211DW1T1 SERIES DEVICES

300PD, POWER DISSIPATION (mW)250200150100500−50RqJA = 833°C/W050100TA, AMBIENT TEMPERATURE (°C)

150Figure 1. Derating Curve

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MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5211DW1T1

VCE(sat), COLLECTOR VOLTAGE (VOLTS)1

IC/IB = 10TA󰀁=󰀁−25°C25°C0.1

75°C1000

VCE = 10 VTA󰀁=󰀁75°C25°C−25°C0.01

0.001

hFE, DC CURRENT GAIN (NORMALIZED)50100

02040IC, COLLECTOR CURRENT (mA)

10

110IC, COLLECTOR CURRENT (mA)

100Figure 2. VCE(sat) versus IC

Figure 3. DC Current Gain

4

IC, COLLECTOR CURRENT (mA)f = 1 MHzIE = 0 VTA = 25°C100

75°C1010.10.01

25°CTA󰀁=󰀁−25°CCob, CAPACITANCE (pF)3

2

1

VO = 5 V01256734Vin, INPUT VOLTAGE (VOLTS)

100

010203040VR, REVERSE BIAS VOLTAGE (VOLTS)

500.001

Figure 4. Output CapacitanceFigure 5. Output Current versus Input Voltage

10

VO = 0.2 VVin, INPUT VOLTAGE (VOLTS)TA󰀁=󰀁−25°C25°C75°C1

0.1

010203040IC, COLLECTOR CURRENT (mA)

50Figure 6. Input Voltage versus Output Current

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MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5212DW1T1

1

IC/IB = 10TA󰀁=󰀁−25°C25°C75°C1000VCE(sat), COLLECTOR VOLTAGE (VOLTS)hFE, DC CURRENT GAIN (NORMALIZED)VCE = 10 VTA󰀁=󰀁75°C25°C−25°C0.1

1000.01

0.001

02040IC, COLLECTOR CURRENT (mA)5010110IC, COLLECTOR CURRENT (mA)100Figure 7. VCE(sat) versus ICFigure 8. DC Current Gain4

IC, COLLECTOR CURRENT (mA)f = 1 MHzIE = 0 VTA = 25°C1001010.10.0175°C25°CTA󰀁=󰀁−25°CCob, CAPACITANCE (pF)3

2

1

VO = 5 V0010203040VR, REVERSE BIAS VOLTAGE (VOLTS)500.0010246Vin, INPUT VOLTAGE (VOLTS)810Figure 9. Output CapacitanceFigure 10. Output Current versus Input Voltage100VO = 0.2 VVin, INPUT VOLTAGE (VOLTS)TA󰀁=󰀁−25°C1075°C25°C10.101020304050IC, COLLECTOR CURRENT (mA)

Figure 11. Input Voltage versus Output Current

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MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5213DW1T1

10

IC/IB = 101000hFE, DC CURRENT GAIN (NORMALIZED)VCE(sat), COLLECTOR VOLTAGE (VOLTS)VCE = 10 VTA󰀁=󰀁75°C25°C−25°C1

TA󰀁=󰀁−25°C0.1

25°C75°C1000.01

02040IC, COLLECTOR CURRENT (mA)5010110IC, COLLECTOR CURRENT (mA)100Figure 12. VCE(sat) versus ICFigure 13. DC Current Gain10.8Cob, CAPACITANCE (pF)0.60.40.20

IC, COLLECTOR CURRENT (mA)f = 1 MHzIE = 0 VTA = 25°C10075°C1010.125°CTA󰀁=󰀁−25°C0.01VO = 5 V0246Vin, INPUT VOLTAGE (VOLTS)

810010203040VR, REVERSE BIAS VOLTAGE (VOLTS)

500.001Figure 14. Output CapacitanceFigure 15. Output Current versus Input Voltage

100

VO = 0.2 VVin, INPUT VOLTAGE (VOLTS)TA󰀁=󰀁−25°C1025°C75°C10.1010203040IC, COLLECTOR CURRENT (mA)

50Figure 16. Input Voltage versus Output Current

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MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5214DW1T1

1hFE, DC CURRENT GAIN (NORMALIZED)IC/IB = 10TA󰀁=󰀁−25°C25°C75°C300250200150100500124681015204050607080IC, COLLECTOR CURRENT (mA)90100VCE = 10TA󰀁=󰀁75°C25°C−25°CVCE(sat), COLLECTOR VOLTAGE (VOLTS)0.10.010.0010204060IC, COLLECTOR CURRENT (mA)80Figure 17. VCE(sat) versus ICFigure 18. DC Current Gain43.5Cob, CAPACITANCE (pF)32.521.510.5002468101520253035VR, REVERSE BIAS VOLTAGE (VOLTS)

404550f = 1 MHzlE = 0 VTA = 25°C100TA󰀁=󰀁75°CIC, COLLECTOR CURRENT (mA)25°C−25°C10VO = 5 V10246Vin, INPUT VOLTAGE (VOLTS)

810Figure 19. Output CapacitanceFigure 20. Output Current versus Input Voltage

10

VO = 0.2 VVin, INPUT VOLTAGE (VOLTS)TA󰀁=󰀁−25°C25°C75°C1

0.1

0102030IC, COLLECTOR CURRENT (mA)

4050Figure 21. Input Voltage versus Output Current

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MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5215DW1T1

VCE(sat), COLLECTOR VOLTAGE (VOLTS)1

IC/IB = 10hFE, DC CURRENT GAINTA = −25°C25°C100075°C75°CVCE = 10 V0.1

−25°C0.01

25°C100100.001

030204010IC, COLLECTOR CURRENT (mA)

501110IC, COLLECTOR CURRENT (mA)

100Figure 22. VCE(sat) versus IC

Figure 23. DC Current Gain

4.5IC, COLLECTOR CURRENT (mA)4Cob, CAPACITANCE (pF)3.532.521.510.500510152025303045VR, REVERSE BIAS VOLTAGE (VOLTS)50f = 1 MHzIE = 0 VTA = 25°C10075°C1025°C1TA = −25°C0.10.01VO = 5 V012345678Vin, INPUT VOLTAGE (VOLTS)9100.001Figure 24. Output CapacitanceFigure 25. Output Current versus Input Voltage10Vin, INPUT VOLTAGE (VOLTS)TA = −25°C175°C25°CVO = 0.2 V0.1010203040IC, COLLECTOR CURRENT (mA)

50Figure 26. Input Voltage versus Output Current

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MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5216DW1T1

VCE(sat), COLLECTOR VOLTAGE (VOLTS)1IC/IB = 10hFE, DC CURRENT GAINTA = −25°C10025°C100075°CVCE = 10 V0.1−25°C0.0175°C25°C100.001030204010IC, COLLECTOR CURRENT (mA)501110IC, COLLECTOR CURRENT (mA)100Figure 27. VCE(sat) versus ICFigure 28. DC Current Gain4.Cob, CAPACITANCE (pF)3.532.521.510.500510152025303045VR, REVERSE BIAS VOLTAGE (VOLTS)50f = 1 MHzIE = 0 VTA = 25°CIC, COLLECTOR CURRENT (mA)1001075°C25°CTA = −25°C10.10.01VO = 5 V012345678Vin, INPUT VOLTAGE (VOLTS)9100.001Figure 29. Output CapacitanceFigure 30. Output Current versus Input Voltage10Vin, INPUT VOLTAGE (VOLTS)1TA = −25°C75°C25°CVO = 0.2 V0.1010203040IC, COLLECTOR CURRENT (mA)

50Figure 31. Input Voltage versus Output Current

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MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5230DW1T1

VCE(sat), COLLECTOR VOLTAGE (VOLTS)1

IC/IB = 1075°C0.1

−25°C25°ChFE, DC CURRENT GAIN10075°C10TA = −25°CVCE = 10 V1110IC, COLLECTOR CURRENT (mA)

10025°C0.01

0.001

030102040IC, COLLECTOR CURRENT (mA)

50Figure 32. VCE(sat) versus IC

Figure 33. DC Current Gain

4.Cob, CAPACITANCE (pF)3.532.521.510.500510152025303045VR, REVERSE BIAS VOLTAGE (VOLTS)50f = 1 MHzIE = 0 VTA = 25°CIC, COLLECTOR CURRENT (mA)1001075°C25°C1TA = −25°C0.10.01VO = 5 V012345678Vin, INPUT VOLTAGE (VOLTS)9100.001Figure 34. Output CapacitanceFigure 35. Output Current versus Input Voltage10Vin, INPUT VOLTAGE (VOLTS)TA = −25°C175°C25°CVO = 0.2 V0.1010203040IC, COLLECTOR CURRENT (mA)

50Figure 36. Input Voltage versus Output Current

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MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5231DW1T1

VCE(sat), COLLECTOR VOLTAGE (VOLTS)1IC/IB = 1075°C−25°C0.01hFE, DC CURRENT GAIN1000.125°C1075°C25°CTA = −25°CVCE = 10 V1110IC, COLLECTOR CURRENT (mA)1000.001030102040IC, COLLECTOR CURRENT (mA)50Figure 37. VCE(sat) versus ICFigure 38. DC Current Gain4.Cob, CAPACITANCE (pF)3.532.521.510.500510152025303045VR, REVERSE BIAS VOLTAGE (VOLTS)50IC, COLLECTOR CURRENT (mA)f = 1 MHzIE = 0 VTA = 25°C10075°C1025°C1TA = −25°C0.10.01VO = 5 V012345678Vin, INPUT VOLTAGE (VOLTS)9100.001Figure 39. Output CapacitanceFigure 40. Output Current versus Input Voltage10Vin, INPUT VOLTAGE (VOLTS)TA = −25°C175°C25°CVO = 0.2 V0.1010203040IC, COLLECTOR CURRENT (mA)

50Figure 41. Input Voltage versus Output Current

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MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5232DW1T1

VCE(sat), COLLECTOR VOLTAGE (VOLTS)1

IC/IB = 10hFE, DC CURRENT GAIN75°C1000

VCE = 10 V0.1

−25°C0.01

75°C100

25°C10

TA = −25°C25°C0.001

030102040IC, COLLECTOR CURRENT (mA)

501

110IC, COLLECTOR CURRENT (mA)

100Figure 42. VCE(sat) versus IC

Figure 43. DC Current Gain

632100510152025303045VR, REVERSE BIAS VOLTAGE (VOLTS)50f = 1 MHzIE = 0 VTA = 25°CIC, COLLECTOR CURRENT (mA)10075°C1025°CCob, CAPACITANCE (pF)1TA = −25°C0.10.01VO = 5 V012345678Vin, INPUT VOLTAGE (VOLTS)9100.001Figure 44. Output CapacitanceFigure 45. Output Current versus Input Voltage10Vin, INPUT VOLTAGE (VOLTS)TA = −25°C175°C25°CVO = 0.2 V0.1010203040IC, COLLECTOR CURRENT (mA)

50Figure 46. Input Voltage versus Output Current

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MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5233DW1T1

VCE(sat), COLLECTOR VOLTAGE (VOLTS)1IC/IB = 10hFE, DC CURRENT GAIN75°C100TA = −25°C1000VCE = 10 V0.1−25°C0.0175°C25°C25°C100.0010520101525IC, COLLECTOR CURRENT (mA)301110IC, COLLECTOR CURRENT (mA)100Figure 47. VCE(sat) versus ICFigure 48. DC Current Gain43.5Cob, CAPACITANCE (pF)32.521.510.500510152025303045VR, REVERSE BIAS VOLTAGE (VOLTS)50f = 1 MHzIE = 0 VTA = 25°CIC, COLLECTOR CURRENT (mA)10075°C1025°C1TA = −25°C0.10.01VO = 5 V012345678Vin, INPUT VOLTAGE (VOLTS)9100.001Figure 49. Output CapacitanceFigure 50. Output Current versus Input Voltage10Vin, INPUT VOLTAGE (VOLTS)TA = −25°C175°C25°CVO = 0.2 V0.105101520IC, COLLECTOR CURRENT (mA)

25Figure 51. Input Voltage versus Output Current

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MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5234DW1T1

VCE(sat), COLLECTOR VOLTAGE (VOLTS)1

IC/IB = 10hFE, DC CURRENT GAIN75°C100TA = −25°C1000VCE = 10 V0.1

75°C25°C−25°C0.01

25°C100.001

0520101525IC, COLLECTOR CURRENT (mA)

301110IC, COLLECTOR CURRENT (mA)

100Figure 52. VCE(sat) versus IC

Figure 53. DC Current Gain

TBDIC, COLLECTOR CURRENT (mA)Cob, CAPACITANCE (pF)TBDVR, REVERSE BIAS VOLTAGE (VOLTS)Vin, INPUT VOLTAGE (VOLTS)

Figure . Output CapacitanceFigure 55. Output Current versus Input Voltage

Vin, INPUT VOLTAGE (VOLTS)TBDIC, COLLECTOR CURRENT (mA)

Figure 56. Input Voltage versus Output Current

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MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5235DW1T1

VCE(sat), COLLECTOR VOLTAGE (VOLTS)1IC/IB = 1075°ChFE, DC CURRENT GAIN1000VCE = 10 V75°C1000.1−25°C0.0125°CTA = −25°C25°C100.001030102040IC, COLLECTOR CURRENT (mA)501110IC, COLLECTOR CURRENT (mA)100Figure 57. VCE(sat) versus ICFigure 58. DC Current Gain4.Cob, CAPACITANCE (pF)3.532.521.510.500510152025303045VR, REVERSE BIAS VOLTAGE (VOLTS)50f = 1 MHzIE = 0 VTA = 25°CIC, COLLECTOR CURRENT (mA)1001025°C75°C1TA = −25°C0.10.01VO = 5 V012345678Vin, INPUT VOLTAGE (VOLTS)9100.001Figure 59. Output CapacitanceFigure 60. Output Current versus Input Voltage10Vin, INPUT VOLTAGE (VOLTS)75°C125°CTA = −25°CVO = 0.2 V0.1010203040IC, COLLECTOR CURRENT (mA)

50Figure 61. Input Voltage versus Output Current

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MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5236DW1T1

VCE(sat), COLLECTOR VOLTAGE (VOLTS)1IC/IB = 10−25°ChFE, DC CURRENT GAIN75°C0.125°C1000VCE = 10 V75°C100TA = −25°C25°C0.01100.001030102040IC, COLLECTOR CURRENT (mA)501110IC, COLLECTOR CURRENT (mA)100Figure 62. VCE(sat) versus ICFigure 63. DC Current Gain3.532.521.510.500510152025303045VR, REVERSE BIAS VOLTAGE (VOLTS)50f = 1 MHzIE = 0 VTA = 25°CIC, COLLECTOR CURRENT (mA)4.5Cob, CAPACITANCE (pF)1001075°C1TA = −25°C25°C0.10.01VO = 5 V012345678Vin, INPUT VOLTAGE (VOLTS)9100.001Figure . Output CapacitanceFigure 65. Output Current versus Input Voltage100Vin, INPUT VOLTAGE (VOLTS)TA = −25°C10175°C25°CVO = 0.2 V0.1010203040IC, COLLECTOR CURRENT (mA)

50Figure 66. Input Voltage versus Output Current

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MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5237DW1T1

VCE(sat), COLLECTOR VOLTAGE (VOLTS)1IC/IB = 10−25°C75°C25°C1000VCE = 10 VhFE, DC CURRENT GAIN75°C100TA = −25°C0.125°C0.01100.001030102040IC, COLLECTOR CURRENT (mA)501110IC, COLLECTOR CURRENT (mA)100Figure 67. VCE(sat) versus ICFigure 68. DC Current Gain3.532.521.510.500510152025303045VR, REVERSE BIAS VOLTAGE (VOLTS)50f = 1 MHzIE = 0 VTA = 25°CIC, COLLECTOR CURRENT (mA)4.5Cob, CAPACITANCE (pF)10075°C1025°CTA = −25°C10.10.01VO = 5 V012345678Vin, INPUT VOLTAGE (VOLTS)9100.001Figure 69. Output CapacitanceFigure 70. Output Current versus Input Voltage100Vin, INPUT VOLTAGE (VOLTS)10TA = −25°C175°C25°CVO = 0.2 V0.1010203040IC, COLLECTOR CURRENT (mA)

50Figure 71. Input Voltage versus Output Current

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MUN5211DW1T1 Series

PACKAGE DIMENSIONS

SC−88 (SOT−363)CASE 419B−02

ISSUE V

DeNOTES:

1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.419B−01 OBSOLETE, NEW STANDARD 419B−02.

DIMAA1A3bCDEeLHEMILLIMETERSMINNOMMAX0.800.951.100.000.050.100.20 REF0.100.210.300.100.140.251.802.002.201.151.251.350.65 BSC0.100.200.302.002.102.20EMITTER 2BASE 2

COLLECTOR 1EMITTER 1BASE 1

COLLECTOR 2

INCHES

NOMMAX0.0370.0430.0020.0040.008 REF0.0040.0080.0120.0040.0050.0100.0700.0780.0860.0450.0490.0530.026 BSC

0.0040.0080.0120.0780.0820.086MIN0.0310.0006HE123−E−b6 PL0.2 (0.008)MEMA3CASTYLE 1:PIN 1. 2. 3. 4. 5. 6.

A1LSOLDERING FOOTPRINT*0.500.01970.650.0250.650.0250.400.01571.90.0748SCALE 20:1mmǓǒinches*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.

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MUN5211DW1T1 Series

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