专利名称：Compensation currents in non-volatile
memory read operations
发明人：Raul-Adrian Cernea申请号：US11157033申请日：20050620公开号：US07193898B2公开日：20070320
专利附图：
摘要：Shifts in the apparent charge stored on a floating gate of a non-volatilememory cell can occur because of coupling of an electric field based on the chargestored in adjacent floating gates. The shift in apparent charge can lead to erroneous
readings by raising the apparent threshold voltage, and consequently, lowering thesensed conduction current of a memory cell. The read process for a selected memorycell takes into account the state of one or more adjacent memory cells. If an adjacentmemory cell is in one or more of a predetermined set of programmed states, acompensation current can be provided to increase the apparent conduction current ofthe selected memory cell. An initialization voltage is provided to the bit line of theprogrammed adjacent memory cell to induce a compensation current between the bitline of the programmed adjacent memory cell and the bit line of the selected memorycell.
申请人：Raul-Adrian Cernea
地址：Santa Clara CA US
国籍：US
代理机构：Vierra Magen Marcus & DeNiro LLP
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