专利名称：DRAM arrays
发明人：Luan C . Tran,Fred D. Fishburn申请号：US11111605申请日：20050421
公开号：US20050236649A1公开日：20051027
专利附图：
摘要：The invention includes memory arrays, and methods which can be utilized forforming memory arrays. A patterned etch stop can be used during memory arrayfabrication, with the etch stop covering storage node contact locations while leavingopenings to bitline contact locations. An insulative material can be formed over the etch
stop and over the bitline contact locations, and trenches can be formed through theinsulative material. Conductive material can be provided within the trenches to formbitline interconnect lines which are in electrical contact with the bitline contact locations,and which are electrically isolated from the storage node contact locations by the etchstop. In subsequent processing, openings can be formed through the etch stop to thestorage node contact locations. Memory storage devices can then be formed within theopenings and in electrical contact with the storage node contact locations.
申请人：Luan C . Tran,Fred D. Fishburn
地址：Meridian ID US,Boise ID US
国籍：US,US
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