RSS100N03资料

RSS100N03

Transistor

Switching (30V, ±10A)

RSS100N03

zFeatures

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small and Surface Mount Package (SOP8).

zApplications

Power switching, DC/DC converter.

zStructure

•Silicon N-channel MOS FET

zAbsolute maximum ratings (Ta=25°C)

ParameterDrain-source voltageGate-source voltageDrain currentSource current (Body diode)Total power dissipatinoChannel temperatureStrage temperature∗1 Pw≤10µs, Duty cycle≤1%∗2 Mounted on a ceramic board.zExternal dimensions (Unit : mm)

SOP8(8)5.0±0.2(5)6.0±0.33.9±0.15(1)Source(2)Source(3)Source(4)Gate(5)Drain(6)Drain(7)Drain(8)Drain1.5±0.10.151.270.4±0.10.1Each lead has same dimensionsMax.1.750.5±0.1(1)(4)0.2±0.1 zEquivalent circuit

(8)(7)(6)(5)(8)(7)(6)(5)∗2∗1(1)(2)(3)(4)(1)Source(2)Source(3)Source(4)Gate(5)Drain(6)Drain(7)Drain(8)Drain(1)(2)(3)(4)∗1 ESD PROTECTION DIODE∗2 BODY DIODE∗A protection diode is included between the gate andthe source terminals to protect the diode against staticelectricity when the product is in use. Use the protectioncircuit when the fixed voltages are exceeded.ContinuousPulsedContinuousPulsedSymbolVDSSVGSSIDIDPISISPPDTchTstgLimits3020±10±401.66.42150−55 to +150UnitVVAAAAW°C°C∗1∗1∗2

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RSS100N03

Transistor

zThermal resistance (Ta=25°C)

ParameterChannel to ambient∗ Mounted on a ceramic board.SymbolRth (ch-a)Limits62.5Unit°C / W∗

zElectrical characteristics (Ta=25°C)

ParameterSymbolMin.−30−1.0−−−6.0−−−−−−−−−−Typ.−−−−9.512.513.5−107032020010165524142.75.3Max.10−102.513.017.218.5−−−−−−−−−−−IGSSGate-source leakageDrain-source breakdown voltageV(BR) DSSZero gate voltage drain currentIDSSGate threshold voltageVGS (th)Static drain-source on-starteresistanceForward transfer admittanceInput capacitanceOutput capacitanceReverse transfer capacitanceTum-on delay timeRise timeTum-off delay timeFall timeTotal gate chargeGate-source chargeGate-drain charge∗PulsedUnitµAVµAVmΩSpFpFpFnsnsnsnsnCnCnCConditionsVGS=20V, VDS=0VID=1mA, VGS=0VVDS=30V, VGS=0VVDS=10V, ID=1mAID=±10A, VGS=10VID=±10A, VGS=4.5VID=±10A, VGS=4VID=±10A, VDS=10VVDS=10VVGS=0Vf=1MHzID=5A, VDD 15VVGS=10VRL=3.0ΩRGS=10ΩVDD 15VVGS=5VID=±10A∗∗∗∗RDS (on)YfsCissCossCrsstd (on)trtd (off)tfQgQgsQgd∗∗∗∗∗∗∗

zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)

ParameterForward voltage∗Pulsed SymbolVSDMin.−Typ.−Max.1.2UnitVConditionsIS=6.4A, VGS=0V∗

zElectrical characteristic curves

10000CAPACITANCE : C (pF)1000tf1000CissGATE-SOURCE VOLTAGE : VGS (V)Ta=25°Cf=1MHzVCE=0V

10000SWITCHING TIME : t (ns)Ta=25°CVDD=15VVGS=10VRG=10ΩPulsed

8Ta=25°C7VDD=15VID=10AR6G=10ΩPulsed32100246810121416

100td(off)trCoss100Crss10td(on)10.01100.010.11101000.1110100DRAIN-SOURCE VOLTAGE : VDS (V)DRAIN CURRENT : ID (A)TOTAL GATE CHARGE : Qg (nC)Fig.1 Typical Capacitancevs. Drain-Source VoltageFig.2 Switching CharacteristicsFig.3 Dynamic Input Characteristics 2/3

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RSS100N03

Transistor

VDS=10VPulsedTa=125°CTa=75°CTa=25°CTa= −25°CSTATIC DRAIN-SOURCEON-STATE RESISTANCE : RDS (on) (mΩ)100

300250200150100500Ta=25°CPulsed

SOURCE CURRENT : Is (A)100Ta=125°CTa=75°CTa=25°CTa= −25°CVGS=0VPulsed

DRAIN CURRENT : ID (A)10101ID=10AID=5A10.10.010.10.0010.00.51.01.52.02.53.002468101214160.010.00.51.01.5GATE-SOURCE VOLTAGE : VGS (V)GATE-SOURCE VOLTAGE : VGS (V)SOURCE-DRAIN VOLTAGE : VSD (V)Fig.4 Typical Transfer CharacteristicsFig.5 Static Drain-SourceOn-State Resistance vs. Gate-Source VoltageFig.6 Source Current vs.Source-Drain Voltage

STATIC DRAIN-SOURCEON-STATE RESISTANCE : RDS (on) (mΩ)STATIC DRAIN-SOURCEON-STATE RESISTANCE : RDS (on) (mΩ)VGS=10VPulsedTa=125°CTa=75°CTa=25°CTa= −25°CVGS=4.5VPulsedTa=125°CTa=75°CTa=25°CTa= −25°CSTATIC DRAIN-SOURCEON-STATE RESISTANCE : RDS (on) (mΩ)1000

1000

1000VGS=4VPulsedTa=125°CTa=25°CTa= −25°C

100100100Ta=75°C10101010.010.111010010.010.11101001110100DRAIN CURRENT : ID (A)DRAIN CURRENT : ID (A)DRAIN CURRENT : ID (A)Fig.7 Static Drain-SourceOn-State Resistancevs. Drain Current (Ι)Fig.8 Static Drain-SourceOn-State Resistancevs. Drain Current (ΙΙ)Fig.9 Static Drain-SourceOn-State Resistancevs. Drain Current (ΙΙΙ)

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Appendix

NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be separately delivered.Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuitsand deciding upon circuit constants in the set.Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of anythird party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices.Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer.Products listed in this document use silicon as a basic material.Products listed in this document are no antiradiation design.The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys).Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.About Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to \"objective\" criteria or an \"informed\" (by MITI clause)on the basis of \"catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.0